TITLE

Fabrication and microstructure of p-type transparent conducting CuS thin film and its application in dye-sensitized solar cell

AUTHOR(S)
Yuan, K. D.; Wu, J. J.; Liu, M. L.; Zhang, L. L.; Xu, F. F.; Chen, L. D.; Huang, F. Q.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p132106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By reducing film thickness to a few nanometers, the narrow-band-gap CuS turns highly transparent. Surface modification by a self-assembled monolayer is the key factor to obtain a thin, dense, and continuous film. The film growth mechanism is identified as “layer-by-layer growth followed by islanding.” After annealing, a p-type conductivity of ∼2×103 S cm-1 is achieved at room temperature, and the thinnest conductive film has an average transparency of 92% between 400 and 800 nm. Using p-type CuS films as front contact layers, a dye-sensitized solar cell was fabricated with a significant photoelectric response.
ACCESSION #
34771933

 

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