Carrier wave-packet transport under the influence of charged quantum dot in small-area resonant tunneling diode

Hou, Y.; Wang, W.-P.; Li, N.; Xu, W.-L.; Lu, W.; Fu, Y.
September 2008
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p132108
Academic Journal
It was shown experimentally that charging InAs quantum dots (QDs) embedded in a small-area GaAs/AlAs double-barrier resonant tunneling diode (RTD) effectively modified the carrier transport properties of the RTD. By adopting and comparing the one-dimensional plane-wave and three-dimensional (3D) wave-packet transport theories we show that the electron transports in the QDRTD device are in the form of 3D wave packets, which are strongly affected by the 3D long-range Coulomb potential induced by charged InAs QDs. This explains well experimental data and indicates that the 3D wave-packet transport model is more appropriate for the QDRTD device.


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