Electrical properties of Ta-doped SnO2 thin films epitaxially grown on TiO2 substrate

Toyosaki, H.; Kawasaki, M.; Tokura, Y.
September 2008
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p132109
Academic Journal
We report electrical properties of Ta-doped SnO2 (Sn1-xTaxO2) films epitaxially grown on (110) surfaces of rutile TiO2 single crystalline substrates by a pulsed laser deposition method. Due to the large in-plane lattice mismatches (3.0% along [110] and 7.7% along [001]), the films had almost relaxed crystalline structure. With increasing x, electron density was systematically enhanced to undergo the insulator-metal transition between x=0.0004 and 0.004. Sn0.95Ta0.05O2 films exhibited the resistivity as low as 1.1×10-4 Ω cm that is comparable to the lowest value for an epitaxial In2O3 film doped with Sn.


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