Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals

Kumar, Dhananjay; Sang Ho Oh; Pennycook, Stephen J.; Majumdar, A. K.
September 2008
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p133105
Academic Journal
High-resolution Hall data in only 3.5 μg of Ni nanocrystals, grown in a planar array on TiN, are reported. We conclude from the exponent, n∼1.06±0.01 in Rs∼ρn, where Rs is the extraordinary Hall constant and ρ is the Ohmic resistivity, that the side-jump mechanism could still be operative if the nanocrystals are below a certain critical size and the mean free path of the electrons is strongly temperature dependent only in the magnetic layer. Also, the 1000 times larger value of Rs than those in bulk Ni makes it an ideal candidate for magnetic sensors.


Related Articles

  • Mechanism of current flow in alloyed ohmic In/GaAs contacts. Blank, T.; Gol’dberg, Yu.; Konstantinov, O.; Nikitin, V.; Posse, E. // Technical Physics;Feb2007, Vol. 52 Issue 2, p285 

    A mechanism of current flow in an alloyed ohmic In contact to low-doped gallium arsenide ( n = 4 × 1015 cm−3) is studied. From the temperature dependence of the contact resistance per unit surface area, it is found that the basic mechanism of current flow is thermionic emission through...

  • The mechanism of current flow in an alloyed In-GaN ohmic contact. Blank, T.; Gol'dberg, Yu.; Konstantinov, O.; Nikitin, V.; Posse, E. // Semiconductors;Oct2006, Vol. 40 Issue 10, p1173 

    The resistance of alloyed In-GaN ohmic contact is studied experimentally. In the temperature range 180–320 K, the resistance per unit area increases with temperature, which is typical of metallic conduction and disagrees with current flow mechanisms associated with thermionic,...

  • Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN. Song, June O; Kim, Kyoung-Kook; Park, Seong-Ju; Seong, Tae-Yeon // Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p479 

    We report on a promising Ni (5 nm)/Al-doped ZnO (AZO) (450 nm) metallization scheme for low resistance and transparent ohmic contacts to p-GaN (5 × 10[SUP17]cm[SUP-3]). It is shown that the as-deposited Ni/AZO contact shows a nonohmic characteristic due to the insulating nature of the...

  • Thermally driven defect formation and blocking layers at metal-ZnO interfaces. Mosbacker, H. L.; Zgrabik, C.; Hetzer, M. J.; Swain, A.; Look, D. C.; Cantwell, G.; Zhang, J.; Song, J. J.; Brillson, L. J. // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p072102 

    The authors used depth-resolved cathodoluminescence spectroscopy and current-voltage measurements to probe the temperature-dependent formation of native point defects and reaction layers at metal-ZnO interfaces and their effect on transport properties. These results identify characteristic...

  • Comment on “Contact mechanisms and design principles for alloyed Ohmic contacts to n-GaN” [J. Appl. Phys. 95, 7940 (2004)]. Yow-Jon Lin // Journal of Applied Physics;10/1/2006, Vol. 100 Issue 7, p073707 

    The contact mechanism and design principles for alloyed Ohmic contacts to n-GaN were investigated in Mohammad’s paper [J. Appl. Phys. 95, 7940 (2004)]. Mohammad’s study demonstrated that both tunneling and thermionic emission were equally important for low resistivity at the...

  • Non-Alloy Cr/Au Ohmic Contacts in the Technology of Planar Beam-Lead GaAs p�i�n Diodes. Aleksandrov, S. E.; Volkov, V. V.; Ivanova, V. P.; Kuz'michev, Yu. S.; Solov'ev, Yu. V. // Technical Physics Letters;Jul2005, Vol. 31 Issue 7, p581 

    The characteristics of non-alloy Cr/Au ohmic contacts in planar beam-lead GaAs p�i�n diodes have been studied. The room-temperature reduced contact resistance in the structures studied was 2 � 10�6 cm2 . The obtained parameters of p�i�n diodes allow these devices to...

  • Formation of ohmic contacts to perylene molecular crystals. Hiramoto, Masahiro; Tomioka, Akinori; Suemori, Kouji; Yokoyama, Masaaki // Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1852 

    Ohmic contacts to perylene molecular crystals were successfully formed at bromine-doped p-type crystal/platinum junctions and sodium-doped n-type crystal/aluminum junctions to enable hole and electron injection, respectively. Charge-carrier doping of the organic semiconductor surface that was in...

  • Low-resistivity and transparent indium-oxide-doped ZnO ohmic contact to p-type GaN. Jae-Hong Lim; Dae-Kue Hwang; Hyun-Sik Kim; Jin-Yong Oh; Jin-Ho Yang; R. Navamathavan; Seong-Ju Park // Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6191 

    We report on the indium-oxide-doped ZnO (IZO) transparent ohmic contact to the p-GaN. The IZO transparent ohmic contact layer was deposited on p-GaN by e-beam evaporation. The transmittance of an IZO film with a thickness of 250 nm was 84%–92% for the light in the wavelength range of 400...

  • Super high voltage Schottky diode with low leakage current for x- and γ-ray detector application. Kosyachenko, L. A.; Gnatyuk, V. A.; Aoki, T.; Sklyarchuk, V. M.; Sklyarchuk, O. F.; Maslyanchuk, O. L. // Applied Physics Letters;3/2/2009, Vol. 94 Issue 9, pN.PAG 

    A significant improvement in x-/γ-ray detector performance has been achieved by forming both rectifying and near-Ohmic contacts by the deposition of Ni on opposite surfaces of semi-insulating CdTe crystals pretreated by special chemical etching and Ar-ion bombardment with different...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics