Structure and interface bonding of GeO2/Ge/In0.15Ga0.85As heterostructures

Molle, Alessandro; Spiga, Sabina; Andreozzi, Andrea; Fanciulli, Marco; Brammertz, Guy; Meuris, Marc
September 2008
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p133504
Academic Journal
The structural and chemical details of GeO2/Ge layers grown on In0.15Ga0.85As substrates by molecular beam deposition were studied in situ by diffraction and spectroscopic techniques. The formation of semiconductor-oxygen bonds at the Ge/In0.15Ga0.85As interface, which may play a decisive role in dictating the quality of the Ge passivation, was assessed after using two different surface preparations, namely Ar sputtering and atomic hydrogen cleaning.


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