Resonant and phonon-assisted tunneling transport through silicon quantum dots embedded in SiO2

Berghoff, B.; Suckow, S.; Rölver, R.; Spangenberg, B.; Kurz, H.; Dimyati, A.; Mayer, J.
September 2008
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p132111
Academic Journal
Charge transport through SiO2/Si/SiO2 double-barrier structures (DBSs) and SiO2 single-barrier structures is investigated by low temperature I-V measurements. Resonant tunneling signatures accompanied by a negative differential conductance are observed if silicon quantum dots (Si QDs) are embedded in the amorphous SiO2 matrix. The I-V characteristics are correlated with the morphology of Si QDs extracted from transmission electron microscopy and photoluminescence. Evidence for phonon-assisted tunneling at low voltages has been found in the DBSs. These results show the potential but also the limitation for charge extraction from Si QDs embedded in SiO2.


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