Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP

Frimmer, Martin; Jie Sun; Maximov, Ivan; Xu, H. Q.
September 2008
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p133110
Academic Journal
Three-terminal junction devices are realized in an InGaAs/InP quantum well by focused ion beam (FIB) implantation and selective wet etching. Room temperature electrical measurements show that the fabricated devices exhibit strong nonlinear electrical properties. The results are discussed in terms of ballistic electron transport. It is demonstrated that FIB-enhanced etching processing can be exploited as a maskless, resist-free technique for fabrication of high-quality and functional nanoelectronic devices.


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