TITLE

InSbN alloys prepared by two-step ion implantation for infrared photodetection

AUTHOR(S)
Zhang, D. H.; Liu, W.; Wang, Y.; Chen, X. Z.; Li, J. H.; Huang, Z. M.; Zhang, Sam S. Y.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p131107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InSbN alloys are fabricated by two-step nitrogen ion implantation into InSb (111) wafers. X-ray photoelectron spectroscopy indicates that most of the implanted nitrogen ions substitute Sb to form In–N bonds. The percentage of the In–N bonds is found to decrease with the increase in the implanted nitrogen. Such alloys can effectively detect long wavelength infrared radiation and the absorption peak energies can be controlled by monitoring the implanted nitrogen dose. The measured peak wavelengths are consistent with the band gaps of the alloys calculated using a ten-band k·p model.
ACCESSION #
34771906

 

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