TITLE

Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra

AUTHOR(S)
Fangyu Yue; Jun Wu; Junhao Chu
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p131909
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg1-xCdxTe grown by molecular beam epitaxy. Besides the discussions about shallow levels including VHg, AsHg, VHg–AsHg complex, and TeHg, two deep levels have been observed in as-grown with an ionization energy of ∼77.0 and ∼95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials.
ACCESSION #
34771901

 

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