TITLE

Structural investigation of GaAs1-xBix/GaAs multiquantum wells

AUTHOR(S)
Tominaga, Yoriko; Kinoshita, Yusuke; Oe, Kunishige; Yoshimoto, Masahiro
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p131915
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs1-xBix/GaAs multiquantum wells (MQWs) have been grown in the layer-by-layer mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has been confirmed by cross-sectional transmission microscopy and high-resolution x-ray diffraction measurements. Photoluminescence has been observed from GaAs1-xBix/GaAs MQW at room temperature. The MQW structures have been confirmed to be thermally stable even after annealing up to 800 °C, although they need to be grown at a low temperature (350–400 °C) for Bi incorporation.
ACCESSION #
34771870

 

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