Photoreflectance of InN and InN:Mg layers: An evidence of Fermi level shift toward the valence band upon Mg doping in InN

Kudrawiec, R.; Suski, T.; Serafinczuk, J.; Misiewicz, J.; Muto, D.; Nanishi, Y.
September 2008
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p131917
Academic Journal
Photoreflectance (PR) has been applied to study the energy-gap related absorption in undoped and Mg-doped InN layers. This technique, due to its sensitivity to built-in electric fields, enables studies of the Fermi level position inside an InN bulk. Narrow PR resonance at 0.68 eV has been observed in the unintentionally doped n-InN layer at 10 K. Due to Mg doping this resonance broadens drastically and exhibits the Franz–Keldysh oscillations typical for band-to-band absorption in a region with strong band bending. Such changes in PR spectra are evidences of a strong Fermi level shift toward the valence band due to Mg doping in the probed bulklike region of a sample.


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