High quality ultraviolet AlGaN/GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers

Zhen-Yu Li; Ming-Hua Lo; Hung, C. T.; Chen, Shih-Wei; Tien-Chang Lu; Hao-Chung Kuo; Shing-Chung Wang
September 2008
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p131116
Academic Journal
Low dislocation density ultraviolet (UV) AlGaN/GaN multiple quantum well (MQW) structure was grown using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers formed by ALD grown AlN/GaN superlattices. The as-grown sample showed smooth surface morphology with a root-mean-square roughness value of only 0.35 nm, and no surface cracks were found. The dislocation density was estimated to be as low as 3.3×107 cm-2. X-ray and transmission electron microscope data showed the MQW had sharp interfaces with good periodicity. The sample had an UV photoluminescence emission at 334 nm (3.71 eV) with a very narrow linewidth of 47 meV at 13 K. The cathodoluminescence image revealed a fairly uniform luminescence pattern at room temperature. The AlGaN/GaN MQW grown by ALD technique should be useful for providing high crystalline quality for fabrication of various optical devices.


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