TITLE

Local work function measurements of epitaxial graphene

AUTHOR(S)
Filleter, T.; Emtsev, K. V.; Seyller, Th.; Bennewitz, R.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p133117
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The work function difference between single layer and bilayer graphene grown epitaxially on 6H-SiC(0001) has been determined to be 135±9 meV by means of the Kelvin probe force microscopy. Bilayer films are found to increase the work function as compared to single layer films. This method allows an unambiguous distinction between interface layer, single layer, and bilayer graphene. In combination with high-resolution topographic imaging, the complex step structure of epitaxial graphene on SiC can be resolved with respect to substrate and graphene layer steps.
ACCESSION #
34771853

 

Related Articles

  • High critical current densities in YBa2Cu3O7-x films grown at high rates by hybrid liquid phase epitaxy. Kursumovic, A.; Evetts, J. E.; MacManus-Driscoll, J. L.; Maiorov, B.; Civale, L.; Wang, H.; Jia, Q. X.; Foltyn, S. R. // Applied Physics Letters;12/19/2005, Vol. 87 Issue 25, p252507 

    Liquid-mediated growth of YBa2Cu3O7-x has the potential to be high rate and low cost. However, the reported critical current densities (Jc) are generally lower than for films deposited by physical vapor deposition processes. We report the deposition of thick high-Jc films (1.2 MA cm-2 in...

  • Epitaxial CoSi2 formation using an oxynitride buffer layer. Jaesang Lee; Keunwoo Lee; Dongock Kim; Taeyong Park; Honggyu Kim; Hyeongtag Jeon // Journal of Materials Research;Aug2009, Vol. 24 Issue 8, p31 

    We investigated the epitaxial growth of CoSi2 (100) on an Si (100) substrate using a modified oxide mediated epitaxy (OME) method to overcome the disadvantages of the OME method. These disadvantages are sensitivity of Co films to contamination by oxygen and the need for reiterating the film...

  • Static current-voltage characteristics of Au/CaF2/ n-Si(111) MIS tunneling structures. Suturin, S. M.; Banshchikov, A. G.; Sokolov, N. S.; Tyaginov, S. E.; Vexler, M. I. // Semiconductors;Nov2008, Vol. 42 Issue 11, p1304 

    Using molecular-beam epitaxy, Au/CaF2/ n-Si(111) structures were fabricated that exhibit lower currents at a given fluoride film thickness (1.5–2 nm) than those of all similar structures studied. At a positive voltage at the metal, the current is in agreement with that calculated within...

  • Improved GaN layer morphology by hydride vapor phase epitaxy on misoriented Al2O3 wafers. Scholz, Ferdinand; Brückner, Peter; Habel, Frank; Peter, Matthias; Köhler, Klaus // Applied Physics Letters;10/31/2005, Vol. 87 Issue 18, p181902 

    Crack-free thick GaN layers have been grown by hydride vapor phase epitaxy on on-axis as well as on off-axis GaN-Al2O3 templates. A dramatic difference in surface quality could be traced back to the misorientation of the substrates: Mirror-like layers have been obtained for slightly off-oriented...

  • Cathodoluminescence study of nonuniformity in hydride vapor phase epitaxy-grown thick GaN films. Lee, Woong; Watanabe, Kentaro; Kumagai, Kazuhiro; Park, Seunghwan; Lee, Hyunjae; Yao, Takafumi; Chang, Jiho; Sekiguchi, Takashi // Journal of Electron Microscopy;Feb2012, Vol. 61 Issue 1, p25 

    The nonuniformity in hydride vapor phase epitaxy (HVPE)-grown thick GaN was studied using cathodoluminescence (CL) technique. It was found that the nonuniform luminescence feature originated from pit-type defects. Two kinds of pit-type defects were distinguished by their morphology: one was...

  • Effects of thickness on the cation segregation in epitaxial (001) and (110) La2/3Ca1/3MnO3 thin films. Estradé, S.; Rebled, J. M.; Arbiol, J.; Peiró, F.; Infante, I. C.; Herranz, G.; Sánchez, F.; Fontcuberta, J.; Córdoba, R.; Mendis, B. G.; Bleloch, A. L. // Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p072507 

    Electron-energy-loss spectroscopy is used to map composition and electronic states in epitaxial La2/3Ca1/3MnO3 (LCMO) films of various thicknesses grown on SrTiO3 (001) and (110) substrates. For relatively thick films (≥20 nm), epitaxial tensile strain in (001) films promotes a...

  • Dependence of electrical properties of epitaxial Pb(Zr,Ti)O3 thick films on crystal orientation and Zr/(Zr+Ti) ratio. Yokoyama, Shintaro; Honda, Yoshihisa; Morioka, Hitoshi; Okamoto, Shoji; Funakubo, Hiroshi; Iijima, Takashi; Matsuda, Hirofumi; Saito, Keisuke; Yamamoto, Takashi; Okino, Hirotake; Sakata, Osami; Kimura, Shigeru // Journal of Applied Physics;11/1/2005, Vol. 98 Issue 9, p094106 

    Epitaxial Pb(Zr,Ti)O3(PZT) films, 1.5–2.0 μm in thickness, with a Zr/ (Zr+Ti) ratio ranging from 0.20 to 0.75 were grown on (100)c-, (110)c-, and (111)c-oriented SrRuO3/ /SrTiO3 substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The effects the Zr/(Zr+Ti) ratio...

  • High rate epitaxy of silicon thick films by medium pressure plasma chemical vapor deposition. Kambara, M.; Yagi, H.; Sawayanagi, M.; Yoshida, T. // Journal of Applied Physics;4/1/2006, Vol. 99 Issue 7, p074901 

    Homoepitaxial silicon thick films have been produced by medium pressure plasma chemical vapor deposition at rates as fast as 60 nm/s and at a temperature of around 700 °C, with a silane gas partial pressure of 4 mTorr. The continuous transition of the film structures from agglomerated to...

  • Selective epitaxial growth of submicron complex oxide structures by amorphous SrTiO3. Morales, P.; DiCiano, M.; Wei, J. Y. T. // Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p192509 

    A chemical-free technique for fabricating submicron complex oxide structures has been developed based on selective epitaxial growth. The crystallinity and hence the conductivity of the complex oxide is inhibited by amorphous SrTiO3 (STO). Using a combination of pulsed laser deposition and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics