TITLE

Deposition sequence dependent variation in interfacial chemical reactions between 8-hydroxyquinolatolithium and Al

AUTHOR(S)
Lee, Young Mi; Park, Yongsup; Yi, Yeonjin; Won Kim, Jeong
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p123301
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The chemical reactions between 8-hydroxyquinolatolithium (Liq) and Al were investigated by using high resolution synchrotron radiation photoelectron spectroscopy. Unlike the LiF/Al case, two opposite deposition sequences (Al/Liq versus Liq/Al) give different interface reactions. When Al is deposited on a Liq layer, there occurs a strong reaction between Liq and Al, which accounts for a clear peak shift in the Li 1s core level. On the other hand, an interface-localized charge transfer without Li 1s splitting occurs with the reversed deposition sequence. The former strong interface reaction can generate ionic Li as a dopant material in Liq layer, causing band bending.
ACCESSION #
34647450

 

Related Articles

  • Abruptness of Au-Si contacts with thin CoSi2 interlayers. Xu, F.; Aldao, C. M.; Vitomirov, I. M.; Weaver, J. H. // Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1946 

    High-resolution synchrotron radiation photoelectron spectroscopy has been used to study Au/Si and Au/CoSi2/Si interface formation at room temperature. Our results show Au-Si intermixing, the absence of a well defined Au-Si compound, and surface segregation of small amounts of Si to the Au...

  • Electronic structures of c-plane and a-plane AlN/ZnO heterointerfaces determined by synchrotron radiation photoemission spectroscopy. Liu, J. W.; Kobayashi, A.; Ueno, K.; Toyoda, S.; Kikuchi, A.; Ohta, J.; Fujioka, H.; Kumigashira, H.; Oshima, M. // Applied Physics Letters;12/20/2010, Vol. 97 Issue 25, p252111 

    c-plane and a-plane AlN films have been grown on single-crystal ZnO substrates by pulsed laser deposition at room temperature. The electronic structures of c-plane and a-plane AlN/ZnO heterojunctions have been characterized by synchrotron radiation photoemission spectroscopy. Based on the...

  • Effects of argon presputtering on the formation of aluminum contacts on polycrystalline diamond. Tachibana, T.; Glass, J. T. // Journal of Applied Physics;12/15/1992, Vol. 72 Issue 12, p5912 

    Focuses on a study which presented the results of in vacuo X-ray photoelectron spectroscopy and Auger electron spectroscopy of Al-diamond interfaces for aluminum overlayer thickness up to 10 A. Factor that changed the I-V characteristics of the aluminum contact; Characteristics of diamond;...

  • Synchrotron radiation assisted deposition of aluminum oxide from condensed layers of.... Strongin, D.R.; Moore, J.F. // Applied Physics Letters;8/10/1992, Vol. 61 Issue 6, p729 

    Examines the production of pure layers of aluminum oxide from synchrotron irradiation of trimethylaluminum and water at seventy-eight kelvin. Use of near-edge x-ray absorption and core level photoelectron spectroscopies for aluminum oxide layer characterization; Removal of carbon in the...

  • Studies of Mn/ZnO (0001) Interfacial Formation and Electronic Properties with Synchrotron Radiation. Zou, C. W.; Xu, P. S.; Wu, Y. Y.; Sun, B.; Xu, F. Q.; Pan, H. B.; Yuan, H. T.; Du, X. L. // AIP Conference Proceedings;2007, Vol. 879 Issue 1, p1626 

    The initial growth, interfacial reaction and Fermi level movement of Mn on the O-terminated Zn (000 1) surface have been investigated by using synchrotron radiation photoelectron spectroscopy (SRPES) and X-ray photoemission (XPS). Mn is found to be grown on the surface in the layer-by-layer...

  • Investigation of the Ti/MgCl2 interface on a Si(111) 7 × 7 substrate. Karakalos, S.; Skala, T.; Plekan, O.; Ladas, S.; Prince, K.; Matolin, V.; Chab, V.; Siokou, A. // Journal of Chemical Physics;6/14/2012, Vol. 136 Issue 22, p224703 

    Photoelectron spectroscopy with synchrotron radiation, low energy electron diffraction, and ion-scattering spectroscopy were used in order to study the Ti/MgCl2 interface grown on an atomically clean Si(111) 7 × 7 substrate. A series of high resolution spectra after deposition of a thick...

  • The effect of magnesium added at C60/Rubrene heterointerfaces. Cheng, Chiu-Ping; Lee, Cheng-Wei; Chu, Yu-Ya; Wei, Ching-Hsuan; Pi, Tun-Wen // Journal of Applied Physics;Dec2013, Vol. 114 Issue 24, p243704 

    This study examines the effect of adding magnesium (Mg) at C60/rubrene heterointerfaces by using synchrotron-radiation photoemission spectroscopy. The heterointerface was obtained by depositing C60 on a 4-Ã… Mg/rubrene surface. The photoemission spectra showed that the added Mg preferentially...

  • Thermal reaction of Al/Ti bilayers with contaminated interface. Thuillard, M.; Tran, L. T.; Nieh, C. W.; Nicolet, M-A. // Journal of Applied Physics;3/15/1989, Vol. 65 Issue 6, p2553 

    Examines some aspects of thermal reactions in aluminum/titanium bilayers in which the interface is contaminated with oxygen. Diffusion of aluminum following thermal annealing; Nucleation and lateral growth of Al[sub3]Ti at the interface; Competition between the lateral growth of Al[sub3]Ti at...

  • X-ray photoelectron spectroscopic study of the chemical vapor deposited W/Al interface. Ohshima, H.; Katayama, M.; Onoda, K.; Hattori, T.; Suzuki, H.; Tokuda, Y. // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p749 

    Presents an x-ray photoelectron spectroscopic study of the chemical vapor deposited tungsten/aluminum interface. Reaction of the aluminum under layer with tungsten hexaluoride during the initial state of tungsten chemical vapor deposition; Depth profiles of AlF[sub3] relative content with...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics