Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics

Zhuang, Q.; Godenir, A.; Krier, A.; Tsai, G.; Lin, H. H.
September 2008
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p121903
Academic Journal
We report molecular beam epitaxial growth and characterization of dilute nitride InAsN:Sb. X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis revealed that nitrogen incorporation is significantly enhanced by introduction of Sb flux during growth, together with a dramatic improvement of the photoluminescence. These observations were attributed to the surfactant effect of Sb which suppresses the surface diffusion length of nitrogen and improves the homogeneity of the alloy. Sb incorporation is enhanced with the presence of nitrogen which was associated with the surface kinetic of growth. InAsN:Sb/InAs p-i-n light emitting diodes operating near 4.0 μm were also realized.


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