Selective epitaxial growth of graphene on SiC

Camara, N.; Rius, G.; Huntzinger, J.-R.; Tiberj, A.; Mestres, N.; Godignon, P.; Camassel, J.
September 2008
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p123503
Academic Journal
We present a method of selective epitaxial growth of few layers graphene (FLG) on a “prepatterned” silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ∼1582 cm-1 in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth.


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