TITLE

Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer epitaxial buffer layer

AUTHOR(S)
Sang, L. W.; Qin, Z. X.; Fang, H.; Dai, T.; Yang, Z. J.; Shen, B.; Zhang, G. Y.; Zhang, X. P.; Xu, J.; Yu, D. P.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p122104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A method of reducing threading dislocation (TD) density in AlN epilayers grown on sapphire substrate is reported. By introducing an AlN buffer layer grown by a pulsed atomic-layer epitaxy method, TDs in epitaxial AlN films were greatly decreased. From transmission electron microscopic images, a clear subinterface was observed between the buffer layer and the subsequently continuous grown AlN epilayer. In the vicinity of the subinterface, the redirection, annihilation, and termination of TDs were observed. The increase in lateral growth rate accounted for TD redirection and annihilation in the AlN epilayer. Strain variation between the two regions resulted in the termination of TDs owing to the dislocation line energy minimization.
ACCESSION #
34647433

 

Related Articles

  • Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1-xN. Katona, T. M.; Cantu, P.; Keller, S.; Wu, Y.; Speck, J. S.; DenBaars, S. P. // Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p5025 

    We have demonstrated maskless lateral epitaxial overgrowth of Al0.96Ga0.04N on sapphire for dislocation reduction. 600 nm and 1 μm thick AlN layers were grown on sapphire via metalorganic chemical vapor deposition. Parallel, periodic trenches were then etched in the AlN and Al0.96Ga0.04N was...

  • Study of the epitaxial relationships between III-nitrides and M-plane sapphire. Vennéguès, Philippe; Tiankai Zhu; Martin, Denis; Grandjean, Nicolas // Journal of Applied Physics;Dec2010, Vol. 108 Issue 11, p113521 

    GaN films epitaxially-grown on M-sapphire may have different orientations, either nonpolar and semipolar. In this paper, the different epitaxial relationships are investigated in details thanks to transmission electron microscopy. It is shown that these relationships drastically depend on the...

  • Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy. Kamimura, Jumpei; Kishino, Katsumi; Kikuchi, Akihiko // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p141913 

    We investigated the selective-area growth (SAG) of InN by rf-plasma-assisted molecular-beam epitaxy using molybdenum (Mo)-mask-patterned sapphire (0001) substrates, which resulted in the formation of regularly arranged N-polar InN microcrystals. Transmission electron microscopy observation...

  • Eliminating stacking faults in semi-polar GaN by AlN interlayers. Dadgar, A.; Ravash, R.; Veit, P.; Schmidt, G.; Müller, M.; Dempewolf, A.; Bertram, F.; Wieneke, M.; Christen, J.; Krost, A. // Applied Physics Letters;7/11/2011, Vol. 99 Issue 2, p021905 

    We report on the elimination of stacking faults by the insertion of low-temperature AlN interlayers in nearly (1016) and (1104) oriented semi-polar GaN grown by metalorganic vapor phase epitaxy on Si(112) and Si(113), respectively. The elimination of these defects is...

  • Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images. Liao, X. Z.; Zou, J.; Cockayne, D. J. H.; Jiang, Z. M.; Wang, X. // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    Ge(Si)/Si(001) coherent islands grown at 700 °C by molecular beam epitaxy were investigated using transmission electron microscopy. [001] on-zone bright-field diffraction contrast imaging and image simulation techniques were used to investigate the structure of these coherent islands....

  • Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing. Volz, K.; Torunski, T.; Rubel, O.; Stolz, W. // Journal of Applied Physics;Sep2008, Vol. 104 Issue 5, p053504 

    The blueshift of the fundamental energy gap of (GaIn)(NAs) upon thermal treatment is well established. However, the physical reason is still controversially discussed in literature. In the present paper we give direct structural evidence using transmission electron microscopy in combination with...

  • Initial stages of epitaxial growth of Y-stabilized ZrO2 thin films on a-SiOx/Si(001) substrates. Bardal, A.; Matthée, Th.; Wecker, J.; Samwer, K. // Journal of Applied Physics;3/15/1994, Vol. 75 Issue 6, p2902 

    Focuses on a study which investigated the initial stages of epitaxial growth of Y-stabilized zirconium oxide thin films on silicon (001) substrates by transmission electron microscopy. Crystallization and growth morphology; Measurement of misfit dislocation at the YSZ/silicon interface; Causes...

  • Study of High Quality Indium Nitride Films Grown on Si(100) Substrate by RF-MOMBE with GZO and AlN Buffer Layers. Chen, Wei-Chun; Shou-Yi Kuo // Journal of Nanomaterials;2012, p1 

    Wurtzite structure InN films were prepared on Si(100) substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE) system. Ga-doped ZnO (GZO) and Amorphous AlN (a-AlN) film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties...

  • Optical and structural properties of sulfur-doped ELOG InP on Si. Yan-Ting Sun; Junesand, Carl; Metaferia, Wondwosen; Kataria, Himanshu; Julian, Nick; Bowers, John; Pozina, Galia; Hultman, Lars; Lourdudoss, Sebastian // Journal of Applied Physics;6/7/2015, Vol. 117 Issue 21, p215303-1 

    Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics