TITLE

Optical properties of columnar InAs quantum dots on InP for semiconductor optical amplifiers

AUTHOR(S)
Kawaguchi, Kenichi; Yasuoka, Nami; Ekawa, Mitsuru; Ebe, Hiroji; Akiyama, Tomoyuki; Sugawara, Mitsuru; Arakawa, Yasuhiko
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p121908
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Optical properties of polarization-controlled columnar quantum dots (QDs) grown by metalorganic vapor-phase epitaxy for semiconductor optical amplifier (SOA) applications are reported. The photoluminescence peak wavelength and polarization sensitivity depended on the time of AsH3 preflow before InAs growth as well as the InAs supply amount, and these changes in the optical properties are considered to be attributed to the change in the strain rather than the change in the height of the columnar QDs. Nearly polarization-insensitive QDs in the 1.5 μm region were obtained by 13-fold columnar QDs and finely controlling polarization of columnar-QD SOAs was demonstrated by changing barrier thickness by 0.05 ML steps.
ACCESSION #
34647432

 

Related Articles

  • Dispersion measurements of a 1.3 μm quantum dot semiconductor optical amplifier over 120 nm of spectral bandwidth. Bagnell, M.; Davila-Rodriguez, J.; Ardey, A.; Delfyett, P. J. // Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p211907 

    Group delay and higher order dispersion measurements are conducted on a 1.3 μm quantum dot semiconductor optical amplifier at various injection currents. White-light spectral interferometry is performed, along with a wavelet transform to recover the group delay. The group delay, group...

  • Polarization control of electroluminescence from vertically stacked InAs/GaAs quantum dots. Inoue, Tomoya; Asada, Masaki; Yasuoka, Nami; Kojima, Osamu; Kita, Takashi; Wada, Osamu // Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p211906 

    We have developed a technique to control the polarization dependence of quantum dot (QD)-semiconductor optical amplifiers (SOAs) using vertically stacked self-assembled InAs QDs with moderately thick intermediate layers. By increasing the number of stacking layers, the transverse magnetic...

  • Quantum beats of fine-structure states in InP quantum dots. Gerlovin, I. Ya.; Ignatĭev, I. V.; Yugova, I. A.; Masumoto, Y. // Optics & Spectroscopy;Apr2008, Vol. 104 Issue 4, p577 

    Different types of quantum beats were experimentally observed in the photoluminescence kinetics of semiconductor nanostructures with InP quantum dots characterized by strong inhomogeneous broadening of the optical transitions. Specific types of beats were selected by varying the magnitude and...

  • Growth of uniform InAs quantum dots on InGaAs surface structure modified superlattices on InP. Zhang, Z. H.; Cheng, K. Y. // Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3183 

    We have developed a matrix layer structure, the InGaAs surface structure modified superlattice, to achieve high quality InAs quantum dots on (100) InP substrates. Formed by periodically repeating the group III- and group V-stabilized InGaAs layers, the InGaAs surface structure modified...

  • Temperature-dependent brightening and darkening of photoluminescence from PbS quantum dots in glasses. Liu, Chao; Kwon, Yong Kon; Heo, Jong // Applied Physics Letters;6/11/2007, Vol. 90 Issue 24, p241111 

    The authors report that the darkening and brightening of photoluminescence from PbS quantum dots can be controlled by adjusting the temperature and excitation intensity. Intensity of the photoluminescence from PbS quantum dots increased with time (photobrightening) when temperature was below 150...

  • Micro-photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B. Selçuk, E.; Hamhuis, G. J.; Nötzel, R. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p535 

    Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity...

  • CdTe Quantum Dots in a Field Effect Structure: Photoluminescence Lineshape Analysis. Kłopotowski, Ł.; Kudelski, A.; Wojnar, P.; Tartakovskii, A. I.; Skolnick, M. S.; Krebs, O.; Voisin, P.; Kret, S.; Dłużewski, P.; Karczewski, G.; Wojtowicz, T. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p301 

    We study an photoluminescence line of a single, self assembled CdTe quantum dot embedded in a field-effect structure. As a reverse bias is applied the line becomes broader and its intensity is decreased as a result of enhanced escape of the photocreated carriers. We account for the observed...

  • Carrier Escape Dynamics in Multilayered Self-Assembled InAs/GaAs Quantum Dots. Qu, Fanyao; Monte, A. F. G.; Hopkinson, M. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p293 

    We report photocurrent (PC) and photoluminescence (PL) investigations of carrier escape dynamics in multilayered InAs/GaAs self-assembled quantum dots. Unusual plateau of PL intensity versus bias voltage and nonlinear dependence of PC on the laser excitation power have been observed. The former...

  • Photoluminescence lifetimes of Si quantum dots. Zianni, X.; Nassiopoulou, A. G. // Journal of Applied Physics;10/1/2006, Vol. 100 Issue 7, p074312 

    We present a continuum model for the calculation of the electron states in Si dots that accounts for the effects of size, shape, and crystallographic orientation of the dots. This formalism has been used to study the behavior of the photoluminescence (PL) lifetime in Si quantum dots. This is due...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics