Air-stable n-type operation of Gd-contacted carbon nanotube field effect transistors

Hyo-Suk Kim; Eun-Kyoung Jeon; Ju-Jin Kim; Hye-Mi So; Hyunju Chang; Jeong-O Lee; Noejung Park
September 2008
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p123106
Academic Journal
We report air-stable n-type operations of the single-walled carbon nanotube field effect transistors (SWNT-FETs) fabricated with Gd electrodes. Unlike previously reported n-type SWNT-FETs, our devices maintained their n-type operation characteristics in ambient atmosphere for more than two months. The shallow Gd films with a thickness below 20 nm are corroded by environmental oxygen, whereas the well-contacted Gd-SWNT interfaces underneath the thick Gd layers are protected from contaminations by air molecules. Theoretical studies based on the first-principles electronic structure calculations confirm that Gd layers have an excellent binding affinity to the SWNTs.


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