A 500 MHz carbon nanotube transistor oscillator

Pesetski, A. A.; Baumgardner, J. E.; Krishnaswamy, S. V.; Zhang, H.; Adam, J. D.; Kocabas, C.; Banks, T.; Rogers, J. A.
September 2008
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p123506
Academic Journal
Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.


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