Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells

Alonso-Álvarez, D.; Taboada, A. G.; Ripalda, J. M.; Alén, B.; González, Y.; González, L.; García, J. M.; Briones, F.; Martí, A.; Luque, A.; Sánchez, A. M.; Molina, S. I.
September 2008
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p123114
Academic Journal
In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness of 18 nm using GaP monolayers for strain compensation. We find a good structural and optical quality of the fabricated samples including a planar growth front across the whole structure, a reduction in the quantum dot size inhomogeneity, and an enhanced thermal stability of the emission. The optimized quantum dot stack has been embedded in a solar cell structure and we discuss the benefits and disadvantages of this approach for high efficiency photovoltaic applications.


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