TITLE

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

AUTHOR(S)
Jae Kyeong Jeong; Won Yang, Hui; Jong Han Jeong; Yeon-Gon Mo; Hye Dong Kim
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p123508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigated the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors. While the device without any passivation layer showed a huge threshold voltage (Vth) shift under positive gate voltage stress, the suitably passivated device did not exhibit any Vth shift. The charge trapping model, which has been believed to be a plausible mechanism, cannot by itself explain this behavior. Instead, the Vth instability was attributed to the interaction between the exposed IGZO backsurface and oxygen and/or water in the ambient atmosphere during the gate voltage stress.
ACCESSION #
34647381

 

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