Performance enhancement of n-channel inversion type InxGa1-xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

Sonnet, A. M.; Hinkle, C. L.; Jivani, M. N.; Chapman, R. A.; Pollack, G. P.; Wallace, R. M.; Vogel, E. M.
September 2008
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p122109
Academic Journal
Significant enhancement in metal-oxide-semiconductor field effect transistor (MOSFET) transport characteristics is achieved with InxGa1-xAs (x=0.53, x=0.20) channel material using ex situ plasma enhanced chemical vapor deposited amorphous Si layer. InxGa1-xAs MOSFETs (L=2 μm, Vgs-Vt=2.0 V) with Si interlayer show a maximum drain current of 290 mA/mm (x=0.53) and 2 μA/mm (x=0.20), which are much higher compared to devices without a Si interlayer. However, charge pumping measurements show a lower average interface state density near the intrinsic Fermi level for devices without the silicon interlayer indicating that a reduction in the midgap interface state density is not responsible for the improved transport characteristics.


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