TITLE

Si metal-oxide-semiconductor field-effect transistor on Si-on-SiC directly bonded wafers with high thermal conductance

AUTHOR(S)
Shinohara, Hiroshi; Kinoshita, Hiroyuki; Yoshimoto, Masahiro
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p122110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single-crystalline Si wafers were directly bonded to single-crystalline 6H-SiC wafers (Si-on-SiC), followed by thinning of the Si wafers to around 1 μm. A Si metal-oxide-semiconductor field-effect transistor (MOSFET) was then fabricated on the Si layer. In a high-temperature atmosphere (∼300 °C), the channel mobility of a Si MOSFET on a conventional Si wafer degraded by around 80%. The Si MOSFET fabricated on the Si-on-SiC wafer, however, showed almost no degradation in its channel mobility from heating. This confirmed that the high thermal conductivity of single-crystalline 6H-SiC improves the heat dissipation performance of Si MOSFETs.
ACCESSION #
34647373

 

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