Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy

Riqing Zhang; Yan Guo; Huaping Song; Xianglin Liu; Shaoyan Yang; Hongyuan Wei; Qinsheng Zhu; Zhanguo Wang
September 2008
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p122111
Academic Journal
The valence band offset (VBO) of the InN/GaAs heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.94±0.23 eV. The conduction band offset is deduced from the known VBO value to be 1.66±0.23 eV, and a type-II band alignment forms at the InN/GaAs heterojunction.


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