TITLE

Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy

AUTHOR(S)
Riqing Zhang; Yan Guo; Huaping Song; Xianglin Liu; Shaoyan Yang; Hongyuan Wei; Qinsheng Zhu; Zhanguo Wang
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p122111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The valence band offset (VBO) of the InN/GaAs heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.94±0.23 eV. The conduction band offset is deduced from the known VBO value to be 1.66±0.23 eV, and a type-II band alignment forms at the InN/GaAs heterojunction.
ACCESSION #
34647356

 

Related Articles

  • Determination of MgO/GaN heterojunction band offsets by x-ray photoelectron spectroscopy. Chen, J.-J.; Gila, B. P.; Hlad, M.; Gerger, A.; Ren, F.; Abernathy, C. R.; Pearton, S. J. // Applied Physics Letters;1/23/2006, Vol. 88 Issue 4, p042113 

    MgO is a promising gate dielectric and surface passivation film for GaN transistors but little is known of the band offsets in the MgO/GaN system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (ΔEv) of MgO/GaN heterostructures in which the...

  • Measurement of the valence-band offset at the epitaxial MgO-GaAs(001) heterojunction by x-ray photoelectron spectroscopy. Lu, Y.; Le Breton, J. C.; Turban, P.; Lépine, B.; Schieffer, P.; Jézéquel, G. // Applied Physics Letters;1/23/2006, Vol. 88 Issue 4, p042108 

    The electronic band structure at the interface of the MgO-GaAs(001) tunnel contact has been experimentally studied. X-ray photoelectron spectroscopy has been used to measure the valence-band offset at the MgO-GaAs(001) heterojunction interface. The valence-band offset ΔEV is determined to be...

  • Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy. Zhang, B. L.; Cai, F. F.; Sun, G. S.; Fan, H. B.; Zhang, P. F.; Wei, H. Y.; Liu, X. L.; Yang, S. Y.; Zhu, Q. S.; Wang, Z. G. // Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p072110 

    The valence band offset (VBO) of MgO(111)/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 3.65±0.23 eV and the conduction band offset is deduced to be 0.92±0.23 eV, indicating that the heterojunction has a type-I band...

  • Band offsets of TiZnSnO/Si heterojunction determined by x-ray photoelectron spectroscopy. Sun, R. J.; Li, X. F.; Jiang, Q. J.; Yan, W. C.; Feng, L. S.; Li, X. D.; Lu, B.; Ye, Z. Z.; Lu, J. G. // Journal of Applied Physics;2014, Vol. 116 Issue 12, p1 

    X-ray photoelectron spectroscopy (XPS) was utilized to measure the valence band offset (ΔEV) of the TiZnSnO (TZTO)/Si heterojunction. TZTO films were deposited on Si (100) substrates using magnetron sputtering at room temperature. By using the Zn 2p3/2 and Sn 3d5/2 energy levels as...

  • The temperature dependence of atomic incorporation characteristics in growing GaInNAs films. Jingling Li; Shuguang Zhang; Fangliang Gao; Lei Wen; Shizhong Zhou; Guoqiang Li // Journal of Applied Physics;2015, Vol. 117 Issue 5, p055304-1 

    We have systematically studied the temperature dependence of incorporation characteristics of nitrogen (N) and indium (In) in growing GaInNAs films. With the implementation of Monte-Carlo simulation, the low N adsorption energy (0.10 eV) is demonstrated. To understand the atomic incorporation...

  • Formation of anodic layers on InAs (111)III. Study of the chemical composition. Valisheva, N.; Tereshchenko, O.; Prosvirin, I.; Kalinkin, A.; Goljashov, V.; Levtzova, T.; Bukhtiyarov, V. // Semiconductors;Apr2012, Vol. 46 Issue 4, p552 

    The chemical composition of ∼20-nm-thick anodic layers grown on InAs (111)III in alkaline and acid electrolytes containing or not containing NHF is studied by X-ray photoelectron spectroscopy. It is shown that the composition of fluorinated layers is controlled by the relation between the...

  • A nondestructive analysis of the B diffusion in Ta–CoFeB–MgO–CoFeB–Ta magnetic tunnel junctions by hard x-ray photoemission. Kozina, Xeniya; Ouardi, Siham; Balke, Benjamin; Stryganyuk, Gregory; Fecher, Gerhard H.; Felser, Claudia; Ikeda, Shoji; Ohno, Hideo; Ikenaga, Eiji // Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072105 

    This work reports on hard x-ray photoelectron spectroscopy (HAXPES) of CoFeB based tunnel junctions. Aim is to explain the role of the boron diffusion for the observed improvement of the tunneling magnetoresistance ratio with increasing annealing temperature. The high bulk sensitivity of HAXPES...

  • X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset. King, P. D. C.; Veal, T. D.; Hatfield, S. A.; Jefferson, P. H.; McConville, C. F.; Kendrick, C. E.; Swartz, C. H.; Durbin, S. M. // Applied Physics Letters;9/10/2007, Vol. 91 Issue 11, p112103 

    The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19±0.17 eV giving a conduction band offset of 3.06±0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in...

  • X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks. Shekhter, P.; Palumbo, F.; Weinfeld, K. Cohen; Eizenberg, M. // Applied Physics Letters;9/8/2014, Vol. 105 Issue 10, p1 

    In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were stud-ied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive bias, localized filaments consisting of oxidized substrate atoms (In, Ga...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics