Structural and electronic properties of crystalline InGaO3(ZnO)m

Lee, W.-J.; Choi, E.-A.; Bang, J.; Ryu, B.; Chang, K. J.
September 2008
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p111901
Academic Journal
Based on theoretical calculations, we find that the crystal structure of InGaO3(ZnO)m consists of an alternating stack of a wurtzite (Ga/Zn)–O block and an In–O octahedral layer. In the (Ga/Zn)–O block, the Ga atoms favor a modulated boundary structure against a flat boundary structure. The band spectrum shows that hole carriers are spatially confined whereas electrons move more freely through the whole crystal. The characteristics of a superlattice structure appears especially in the flat boundary structure. The band gap decreases with m due to the reduction in the quantum confinement effect.


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