Tailoring the gas sensing properties of ZnO thin films through oxygen nonstoichiometry

Kobrinsky, V.; Rothschild, A.; Lumelsky, V.; Komem, Y.; Lifshitz, Y.
September 2008
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p113502
Academic Journal
A comparative study of the gas sensing properties of n- and p-type ZnO films was performed. The carrier type and concentration tailored by varying the sputtering Ar/O2 mixture were examined by Hall effect measurements. The gas sensing properties were studied by monitoring changes in the dc resistance upon exposure to hydrogen or oxygen. The selectivity of ZnO sensors to these gases was tailored by the carrier type. The origin of the doping and the defect chemistry are evaluated in view of the films’ growth process. The doping effect on the electrical conduction mechanism and sensor performance is discussed.


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