Reduction of stacking fault density in m-plane GaN grown on SiC

Cho, Y. S.; Sun, Q.; Lee, I.-H.; Ko, T.-S.; Yerino, C. D.; Han, J.; Kong, B. H.; Cho, H. K.; Wang, S.
September 2008
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p111904
Academic Journal
We report the reduction in basal-plane stacking faults (BSFs) in m-plane GaN grown on m-plane SiC. The origin of BSFs is linked to heteronucleation of m-plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m-plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaN/GaN quantum well emission are presented.


Related Articles

  • Breakdown of crystallinity in low-temperature-grown GaAs layers. Liliental-Weber, Zuzanna; Swider, W.; Yu, K.M.; Kortright, J.; Smith, F.W.; Calawa, A.R. // Applied Physics Letters;5/13/1991, Vol. 58 Issue 19, p2153 

    Presents a systematic study of the change in structural quality of as-grown GaAs layers deposited at temperatures between 180 and 210 degrees Celsius by molecular beam epitaxy, using transmission electron microscopy, double-crystal x-ray rocking curves and particle-induced x-rat emission. ...

  • ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers. Guo, W.; Allenic, A.; Chen, Y. B.; Pan, X. Q.; Tian, W.; Adamo, C.; Schlom, D. G. // Applied Physics Letters;2/18/2008, Vol. 92 Issue 7, p072101 

    We report the growth and characterization of single-crystalline, crack-free, epitaxial (0001) ZnO films on (111) Si substrates using intervening epitaxial Lu2O3 buffer layers. The epitaxial orientation relationships are (0001)ZnO∥(111)Lu2O3∥(111)Si and...

  • Transmission electron microscopy study of diamond nucleation on 6H-SiC single crystal with.... Li Chang; Tzer-Shen Lin; Jiun-Long Chen; Chen, Fu-Rong // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3444 

    Focuses on the transmission electron microscopy study of diamond nucleation on 6H-SiC single crystal with possibility of epitaxy. Use of hydrogen and carbon-containing gases in growing diamond films; Estimation of nucleation density; Description of the substrate surface.

  • Compositional instability in InAlN/GaN lattice-matched epitaxy. Wei, Q. Y.; Li, T.; Huang, Y.; Huang, J. Y.; Chen, Z. T.; Egawa, T.; Ponce, F. A. // Applied Physics Letters;2/27/2012, Vol. 100 Issue 9, p092101 

    The InxAl1-xN/GaN system is found to show compositional instability at the lattice-matched composition (x = 0.18) in epitaxial layers grown by metal organic chemical vapor deposition. The breakdown in compositional homogeneity is triggered by threading dislocations with a screw component...

  • Investigations of stacking fault density in perpendicular recording media. Piramanayagam, S. N.; Varghese, Binni; Yi Yang; Wee Kiat Lee; Hang Khume Tan // Journal of Applied Physics;2014, Vol. 115 Issue 24, p243901-1 

    In magnetic recording media, the grains or clusters reverse their magnetization over a range of reversal field, resulting in a switching field distribution. In order to achieve high areal densities, it is desirable to understand and minimize such a distribution. Clusters of grains which contain...

  • (Pt/Co/Pt)/X multilayer films with high Kerr rotations and large perpendicular magnetic.... Bertero, G.A.; Sinclair, R. // Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3337 

    Examines the sputter-deposition of (platinum (Pt)/cobalt/Pt)/X multilayer films with Kerr rotations and perpendicular magnetic anisotropy energies. Dependence of magnetic coercivity on deposition parameters; Use of high resolution transmission electron microscopy; Growth of sputter-deposited...

  • Fabrication of nonepitaxially grown double-layered FePt:C/FeCoNi thin films for perpendicular recording. Yan, M. L.; Li, X. Z.; Gao, L.; Liou, S. H.; Sellmyer, D. J.; van de Veerdonk, R. J. M.; Wierman, K. W. // Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3332 

    A noneptaxially grown double-layered thin-film medium of nanocompsite FePt:C with a FeCoNi soft underlayer for high-density perpendicular magnetic recording was fabricated and investigated. Square-shaped perpendicular loops with a remanance ratio nearly equal to one and a coercivity as large as...

  • Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy. Sugiura, Kenji; Ohta, Hiromichi; Nakagawa, Shin-ichi; Huang, Rong; Ikuhara, Yuichi; Nomura, Kenji; Hosono, Hideo; Koumoto, Kunihito // Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p152105 

    Herein we report the anisotropic carrier transport properties of a layered cobaltate, NaxCoO2 epitaxial film grown on the m-plane of an α-Al2O3 substrate using reactive solid-phase epitaxy. Scanning and transmission electron microscopy analyses revealed that NaxCoO2 was heteroepitaxially...

  • In situ x-ray scattering study of PbTiO[sub 3] chemical-vapor deposition. Murty, M. V. Ramana; Streiffer, S. K.; Stephenson, G. B.; Eastman, J. A.; Bai, G.-R.; Munkholm, A.; Auciello, O.; Thompson, Carol // Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1809 

    We present in situ surface x-ray scattering measurements of PbTiO[sub 3] epitaxy by metal–organic chemical-vapor deposition. Oscillations in crystal truncation rod intensity corresponding to layer-by-layer growth are observed under a variety of growth conditions. At lower PbO...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics