TITLE

Reduction of stacking fault density in m-plane GaN grown on SiC

AUTHOR(S)
Cho, Y. S.; Sun, Q.; Lee, I.-H.; Ko, T.-S.; Yerino, C. D.; Han, J.; Kong, B. H.; Cho, H. K.; Wang, S.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p111904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the reduction in basal-plane stacking faults (BSFs) in m-plane GaN grown on m-plane SiC. The origin of BSFs is linked to heteronucleation of m-plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m-plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaN/GaN quantum well emission are presented.
ACCESSION #
34555729

 

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