TITLE

Correlation between residual strain and electrically active grain boundaries in multicrystalline silicon

AUTHOR(S)
Chen, Jun; Chen, Bin; Sekiguchi, Takashi; Fukuzawa, Masayuki; Yamada, Masayoki
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p112105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the correlation between residual strain and electrically active grain boundaries (GBs) in multicrystalline silicon. The former concerns the process yield, and the latter affects the solar cell efficiency. The distribution of strain was imaged by scanning infrared polariscope, and the electrically active GBs were characterized by electron-beam-induced current. Large strain was detected near multitwin boundaries and small-angle GBs. The multitwin boundaries are electrically inactive, while small-angle GBs act as strong recombination centers. It indicates that the electrical activities of GBs are not directly related to the residual strain.
ACCESSION #
34555728

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics