TITLE

Nanoelectromechanical switch with low voltage drive

AUTHOR(S)
Jang, J. E.; Cha, S. N.; Choi, Y.; Butler, T. P.; Kang, D. J.; Hasko, D. G.; Jung, J. E.; Jin, Y. W.; Kim, J. M.; Amaratunga, G. A. J.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p113105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-alignment. The thickness of the insulator determines the width of the gap and the etching process, used to produce the vertical gate, removes the need for a complicated lithography step. The low drive voltage increases device stability and reliability and allows the device to be deployed in a wide range of applications.
ACCESSION #
34555725

 

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