Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering

Min-Suk Oh; Dae-Kue Hwang; Yong-Seok Choi; Jang-Won Kang; Seong-Ju Park; Chi-Sun Hwang; Kyoung Ik Cho
September 2008
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p111905
Academic Journal
Phosphorus (P)-doped ZnO thin films were grown by radio-frequency magnetron sputtering to study the microstructural properties of p-type ZnO. As-grown P-doped ZnO, a semi-insulator, was converted to p-type ZnO after being annealed at 800 °C in an N2 ambient. X-ray diffraction, secondary-ion-mass spectrometry, and Hall effect measurements indicated that P2O5 phases in as-grown P-doped ZnO disappeared after thermal annealing to form a substitutional P at an O lattice site, which acts as an acceptor in P-doped ZnO. Transmission electron microscopy showed that the formation of stacking faults was facilitated to release the strain in P-doped ZnO during post-thermal annealing.


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