TITLE

Tuning electrical properties of transparent p-NiO/n-MgZnO heterojunctions with band gap engineering of MgZnO

AUTHOR(S)
Xinman Chen; Kaibin Ruan; Guangheng Wu; Dinghua Bao
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p112112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Transparent p-n heterojunctions composed of p-type NiO and n-type MgZnO thin films were fabricated on indium-tin-oxide-coated glass substrates by sol-gel spin coating technique. The p-n junctions exhibit typical current-voltage behaviors with good rectifying characteristics, and their electrical properties can be effectively tuned by band gap engineering of n-MgZnO. With increment of Mg content in n-MgZnO layer, enlarging band gap can lead to the higher forward threshold voltage, higher breakdown voltage, and lower reverse saturation current. The electrical behaviors of the p-n junctions can be further improved by using compositionally graded n-MgZnO layer instead of single n-MgZnO layer. These results suggest that the transparent all-oxide p-NiO/n-MgZnO heterojunctions can find applications in transparent electronic devices.
ACCESSION #
34555699

 

Related Articles

  • Ion composition of saturated vapor of salt systems: I. Role of the condensed phase electrical conductivity. Nikitin, M.; Zbezhneva, S. // High Temperature;Mar2014, Vol. 52 Issue 2, p205 

    By the example of ion-molecular reactions in fluoride systems, including alkali metals, we show the influence of the effusion chamber material and of the inserted addition agents on formation of the ion emitting surface. In the mass-spectrometric experiment, the possibility of polarization of...

  • Submicron gap capacitor for measurement of breakdown voltage in air. Hourdakis, Emmanouel; Simonds, Brian J.; Zimmerman, Neil M. // Review of Scientific Instruments;Mar2006, Vol. 77 Issue 3, p034702 

    We have developed a new method for measuring the value of breakdown voltage in air for electrode separations from 400 nm to 45 μm. The electrodes used were thin film Au lines evaporated on sapphire. The resulting capacitors had an area of 80×80 μm2. We demonstrate the ability to deduce...

  • Electrical conductivity of porous media with two-phase saturation. Murtsovkin, V. // Colloid Journal;Jan2013, Vol. 75 Issue 1, p103 

    Relations are derived for calculating the electrical conductivity of porous media with two-phase saturation. The considered calculations are based on a capillary-lattice model of a porous medium, the model being composed of several unequally scaled three-dimensional cubic lattices of...

  • Photosensitivity of heterojunctions formed by deposition of gum on a layered III—VI semiconductor. Drapak, S.; Kovalyuk, Z. // Technical Physics;Sep2007, Vol. 52 Issue 9, p1178 

    The list of materials showing promise for the production of photosensitive structures is extended to include an organic material of biological origin known as gum. The current-voltage characteristics of hetero-junctions formed by a gum layer and a layered semiconductor (InSe, GaSe) are studied....

  • Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions. Ganguly, Satyaki; Verma, Jai; Li, Guowang; Zimmermann, Tom; Xing, Huili; Jena, Debdeep // Applied Physics Letters;11/7/2011, Vol. 99 Issue 19, p193504 

    Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of investigating scaling properties of gate-stacks consisting atomic-layer deposited Al2O3/III-Nitride...

  • Performance enhancement of composition-graded-base type-II InP/GaAsSb double-heterojunction bipolar transistors with fT>500 GHz. Snodgrass, William; Wu, Bing-Ruey; Hafez, Walid; Cheng, K. Y.; Feng, Milton // Applied Physics Letters;5/29/2006, Vol. 88 Issue 22, p222101 

    The high frequency performance of type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with compositionally graded and uniform 25 nm base layers and 65 nm InP collectors is investigated. The graded base DHBT achieves a peak current gain of 20.5 compared to 14.9 for the uniform...

  • Conducting properties of polyaniline blends. Pinto, N. J.; Torres, C. M.; Kahol, P. K.; McCormick, B. J. // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8512 

    Presents information on a study that reported direct current conductivity measurements of mixed samples of polyaniline in the conducting form blended with polyaniline in the insulating form and made conducting subsequent to processing. Experimental procedure; Results and discussion; Conclusion.

  • On the Stability Criterion in a Saturated Atmosphere. Richiardone, R.; Giusti, F. // Journal of the Atmospheric Sciences;7/15/2001, Vol. 58 Issue 14 

    Focuses on the stability of criterion in a saturated atmosphere. Indication of the expression of the moist buoyancy frequency; Description of the vapor gradient effect; Correlation between vapor gradient effect and condensed water one.

  • Glassy states of clusters with pairwise atomic interactions. Berry, R. Stephen; Smirnov, Boris M. // Journal of Chemical Physics;4/1/2003, Vol. 118 Issue 13, p5979 

    The glassy state of argon is examined from the standpoint that this state of a system is an ensemble of frozen excited configurations. The basis is experimental data for deposition of an argon stream on a very cold substrate; the measurements provide the dependence of the saturated vapor...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics