TITLE

Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

AUTHOR(S)
Shima, Hisashi; Takano, Fumiyoshi; Muramatsu, Hidenobu; Akinaga, Hiro; Tamai, Yukio; Inque, Isao H.; Takagi, Hidenori
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p113504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Structural and resistance switching properties were investigated in the CoO resistance random access memory (RRAM) with the Ta electrode. The intermediate layer consisting of Co and Ta oxides was confirmed at the interface by the transmission electron microscopy and electron energy loss spectroscopy. The great affinity with oxygen in Ta together with a high resistivity of the Ta oxide improves the operational performance of RRAM. The controllability of the resistance after forming and the low-current operation property were substantially improved by using the load resistor connected in series with CoO RRAM with the Ta electrode. The reset current less than 0.2 mA and the switching speed faster than 20 ns were demonstrated.
ACCESSION #
34555692

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics