TITLE

ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV

AUTHOR(S)
Yang, C.; Li, X. M.; Gu, Y. F.; Yu, W. D.; Gao, X. D.; Zhang, Y. W.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p112114
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
ZnO based oxide system Zn1-x-yBexMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.
ACCESSION #
34555679

 

Related Articles

  • Synthesis of Core/Shell Nanowires Using Doped ZnO Targets. Nakamura, Daisuke; Okazaki, Kota; Kubo, Kazuki; Tsuta, Koji; Higashihata, Mitsuhiro; Okada, Tatsuo // Journal of Laser Micro / Nanoengineering;2012, Vol. 7 Issue 1, p109 

    ZnO nanowires have attracted a great attention as building blocks for the optoelectronic devices. For the practical optoelectronic applications based on the ZnO nanowires, synthesis technique of ZnO nanowire with layered structures is significantly important in order to achieve a p-n junction, a...

  • Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy. Singh, S. D.; Ajimsha, R. S.; Sahu, Vikas; Kumar, Ravi; Misra, P.; Phase, D. M.; Oak, S. M.; Kukreja, L. M.; Ganguli, Tapas; Deb, S. K. // Applied Physics Letters;11/19/2012, Vol. 101 Issue 21, p212109 

    Studies on band-offset and band-alignment of heterojunction of highly c-axis oriented ZnO thin films grown on n-Ge (1 1 1) by pulsed laser deposition show a type-II band alignment with the valence band offset (ΔEV) of 3.1 ± 0.2 eV. The valence band spectra of this heterojunction show band...

  • Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction. Xie, X. H.; Zhang, Z. Z.; Shan, C. X.; Chen, H. Y.; Shen, D. Z. // Applied Physics Letters;8/20/2012, Vol. 101 Issue 8, p081104 

    We report a dual-color ultraviolet (UV) photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction. The device exhibits distinct dominant responses at solar blind (250 nm) and visible blind (around 330 nm) UV regions under different reverse biases. By using the energy band diagram...

  • Transparent conducting films of ZnO-ZrO[sub 2]: Structure and properties. Qadri, S. B.; Kim, H.; Horwitz, J. S.; Chrisey, D. B. // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6564 

    Transparent conducting films comprised of ZnO and ZrO[sub 2], with ZrO[sub 2] content varying between 0 and 10 wt %, have been deposited using pulsed-laser deposition. These films have resistivities ranging between 5.4x10[sup -4] and 5.6x10[sup -2] Ω cm with an optical transparency of more...

  • Optical and electrical properties of gallium-doped MgxZn1-xO. Wei, Wei; Jin, Chunming; Narayan, Jagdish; Narayan, Roger J. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 1, p013510-1 

    In this study, the optical and electrical properties of epitaxial single crystal gallium-doped MgxZn1-xO thin films grown on c-plane sapphire substrates by pulsed laser deposition were investigated. In these films, the Ga content was varied from 0.05 to 7 at. % and the Mg content was varied from...

  • Optical and structural properties of MgZnO/ZnO hetero- and double heterostructures grown by pulsed laser deposition. Heitsch, S.; Benndorf, G.; Zimmermann, G.; Schulz, C.; Spemann, D.; Hochmuth, H.; Schmidt, H.; Nobis, T.; Lorenz, M.; Grundmann, M. // Applied Physics A: Materials Science & Processing;Jul2007, Vol. 88 Issue 1, p99 

    MgZnO thin films, MgZnO/ZnO heterostructures (HS) and double heterostructures (DHS) have been prepared on a-plane sapphire substrates by means of pulsed laser deposition (PLD). A linear blueshift of the MgZnO emission with increasing Mg content is observed in photoluminescence spectroscopy (PL)...

  • Structural and Optical Properties of Hexagonal Mgx Zn1-xO Thin Films. Chunming Jin; Narayan, Roger J. // Journal of Electronic Materials;May2006, Vol. 35 Issue 5, p869 

    High-quality epitaxial magnesium zinc oxide (MgxZn1-xO) alloy thin films were grown on sapphire (α-Al2O3 (0001)) substrates using pulsed laser deposition. The structural and optical properties of these hexagonal films were determined using transmission electron microscopy (TEM), x-ray...

  • Comment on 'Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition' [Appl. Phys. Lett. 89, 161912 (2006)]. Gu, X. Q. // Applied Physics Letters;12/17/2012, Vol. 101 Issue 25, p256101 

    The article offers the author's insights on the study regarding the multiple quantum wells (MQWs) of zinc oxide (ZnO) which grow in sapphire through buffer with pulsed laser deposition. The author mentions the use of time independent Schrödinger equation with infinite square potential...

  • Structural and Optical Studies of Magnesium Doped Zinc Oxide Thin Films. Agrawal, Arpana; Dar, Tanveer Ahmad; Sen, Pratima // Journal of Nano- & Electronic Physics;2013, Vol. 5 Issue 2, p02025-1 

    The paper describes the structural and optical properties of Magnesium doped Zinc Oxide (Mg 3.5 %, 6 %, 9 %, 12 % by weight) thin films prepared by pulsed laser deposition technique. The samples are characterized by X-ray diffraction technique, Ultra-violet visible absorption spectroscopy, X-ray...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics