TITLE

High-performance solution-processed triisopropylsilylethynyl pentacene transistors and inverters fabricated by using the selective self-organization technique

AUTHOR(S)
Se Hyun Kim; Danbi Choi; Dae Sung Chung; Chanwoo Yang; Jaeyoung Jang; Chan Eon Park; Sang-Hee Ko Park
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p113306
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
To obtain selectively self-organized active layers of organic field-effect transistors (OFETs) and inverters from a solution-phased triisopropylsilylethynyl pentacene (TIPS-PEN) semiconductor, we locally patterned an oxide dielectric, covered with a hydrophobic fluoropolymer, using O2 plasma etching. Drop-cast TIPS-PEN molecules were selectively crystallized on the O2-plasma-etched area, where a hydrophilic oxide surface was produced. Modification of the patterned oxide dielectrics with hexamethyldisilazane led to a field-effect mobility of the TIPS-PEN OFETs of 0.185 cm2 V-1 s-1, a substhreshold swing of 0.738 V/decade and an on/off ratio of 107. Moreover, an inverter composed of two of these OFETs showed good device operation and inverter gain of 5.6.
ACCESSION #
34555672

 

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