Strain dependence of indirect band gap for strained silicon on insulator wafers

Munguía, J.; Bremond, G.; Bluet, J. M.; Hartmann, J. M.; Mermoux, M.
September 2008
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p102101
Academic Journal
We have used low temperature photoluminescence measurements in order to quantify the impact of strain effect on the Si indirect band gap in 9 nm thick tensely strained silicon on insulator layers. A redshift of the transverse optical phonon excitonic recombination in the strained silicon layer was evidenced as the strain in the layer is increased. Band gap shrinkages in the Δ direction equal to 130±3 meV, 184±3 meV, and 239±3 meV were obtained for 0.87±0.03%, 1.22±0.05%, and 1.54±0.06% strain values. These measured indirect transitions are in good agreement with the calculated strained silicon indirect band gap values.


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