TITLE

Strain dependence of indirect band gap for strained silicon on insulator wafers

AUTHOR(S)
Munguía, J.; Bremond, G.; Bluet, J. M.; Hartmann, J. M.; Mermoux, M.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p102101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have used low temperature photoluminescence measurements in order to quantify the impact of strain effect on the Si indirect band gap in 9 nm thick tensely strained silicon on insulator layers. A redshift of the transverse optical phonon excitonic recombination in the strained silicon layer was evidenced as the strain in the layer is increased. Band gap shrinkages in the Δ direction equal to 130±3 meV, 184±3 meV, and 239±3 meV were obtained for 0.87±0.03%, 1.22±0.05%, and 1.54±0.06% strain values. These measured indirect transitions are in good agreement with the calculated strained silicon indirect band gap values.
ACCESSION #
34449636

 

Related Articles

  • Thickness dependence of photoluminescence for tensely strained silicon layer on insulator. Munguía, J.; Bluet, J.-M.; Baira, M.; Marty, O.; Bremond, G.; Hartmann, J. M.; Mermoux, M. // Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p191913 

    Strain and crystalline quality of tensely strained silicon on insulator with thickness ranging from 8 to 100 nm have been evaluated by low temperature photoluminescence (PL). The strain conservation in the strained Si layers was checked by Raman spectroscopy. The PL clearly shows the emission...

  • Phonon mode study of Si nanocrystals using micro-Raman spectroscopy. Xia, Hua; He, Y. L.; Wang, L. C.; Zhang, W.; Liu, X. N.; Zhang, X. K.; Feng, D.; Jackson, Howard E. // Journal of Applied Physics;12/1/1995, Vol. 78 Issue 11, p6705 

    Presents a phonon mode study of silicon nanocrystals using micro-Raman spectroscopy. Method of the study; Results and discussion; Conclusion.

  • Direct evidence for the amorphous silicon phase in visible photoluminescent porous silicon. Perez, J.M.; Villalobos, J. // Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p563 

    Provides evidence for the presence of amorphous silicon phase in visible photoluminescent (PL) porous silicon (PS). Use of micro-Raman spectroscopy; Absence of Raman line on PS with visible PL; Effect of hydrogen atoms on visible PL.

  • In situ monitoring of Raman scattering and photoluminescence from silicon surfaces in HF aqueous solutions. Ren, B.; Liu, F. M.; Xie, J.; Mao, B. W.; Zu, Y. B.; Tian, Z. Q. // Applied Physics Letters;2/23/1998, Vol. 72 Issue 8 

    In situ Raman spectra of SiH[sub x], Si–F, and Si–Si vibrations from Si surfaces in HF aqueous solutions are obtained using a highly sensitive confocal microprobe Raman system. Electrochemical roughening pretreatment and laser-assisted roughening procedure enable good quality...

  • Raman investigation of light-emitting porous silicon layers: Estimate of characteristic crystallite dimensions. Gregora, I.; Champagnon, B.; Halimaoui, A. // Journal of Applied Physics;3/15/1994, Vol. 75 Issue 6, p3034 

    Deals with a study which conducted a Raman spectroscopy investigation on light-emitting porous silicon layers prepared on boron-doped substrates. Experimental procedures; Photoluminescence of silicon layers; Features of porous silicon; Discussion and conclusions.

  • Fabrication and characterization of porous silicon layers for applications in optoelectronics. Dubey, R. S.; Gautam, D. K. // Optical & Quantum Electronics;Feb2009, Vol. 41 Issue 3, p189 

    In the present paper, several samples of porous silicon monolayers and multilayers were prepared at different anodization conditions with fixed HF concentration. The room temperature photoluminescence wavelength observed to be increased with increased etching time and current density...

  • Photoluminescence and Raman Spectroscopy of Polycrystalline ZnO Nanofibers Deposited by Electrospinning. Sen, Banani; Stroscio, Michael; Dutta, Mitra // Journal of Electronic Materials;Sep2011, Vol. 40 Issue 9, p2015 

    The technique of electrospinning offers the advantage of growing nanowires in bulk quantities in comparison with traditional methods. We report optical studies of polycrystalline zinc oxide (ZnO) nanofibers (∼100 nm thick and 5 μm long) deposited by electrospinning. Photoluminescence...

  • Crystal size and temperature measurements in nanostructured silicon using Raman spectroscopy. Viera, G.; Huet, S.; Boufendi, L. // Journal of Applied Physics;10/15/2001, Vol. 90 Issue 8, p4175 

    In this work we present a detailed structural characterization by Raman spectroscopy of hydrogenated amorphous silicon (a-Si:H) and of nanostructured silicon (ns-Si:H) thin films grown in radio-frequency plasma. The ns-Si:H thin films, also called polymorphous Si thin films, consist of a...

  • Temperature dependence of Brillouin light scattering spectra of acoustic phonons in silicon. Olsson, Kevin S.; Klimovich, Nikita; Kyongmo An; Sullivan, Sean; Weathers, Annie; Li Shi; Xiaoqin Li // Applied Physics Letters;2/2/2015, Vol. 106 Issue 5, p1 

    Electrons, optical phonons, and acoustic phonons are often driven out of local equilibrium in electronic devices or during laser-material interaction processes. The need for a better understanding of such non-equilibrium transport processes has motivated the development of Raman spectroscopy as...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics