TITLE

Ti-based nonalloyed Ohmic contacts for Al0.15Ga0.85N/GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy

AUTHOR(S)
Seo, Hui-Chan; Chapman, Patrick; Cho, Hyun-Ick; Lee, Jung-Hee; Kim, Kyekyoon (Kevin)
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p102102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A technique for regrowing n+-GaN layers has been developed to realize nonalloyed Ohmic contacts using plasma assisted molecular beam epitaxy. The contact resistance and device performance were measured of a recessed-gate with the regrowth and of recessed-source/drain AlGaN/GaN high electron mobility transistors (HEMTs). With the regrown n+-GaN layers and recessed drain/source, a low contact resistance of 0.6 Ω mm was obtained for Ti/Au contacts to AlGaN. The peak drain current (IDS,max) and maximum transconductance (gm,max) of the AlGaN/GaN HEMTs with nonalloyed Ohmic contacts were 573 mA/mm and 60 mS/mm, respectively. These results demonstrate that the regrowth of highly doped GaN layers is crucial in achieving low-resistance nonalloyed Ohmic contacts for the HEMT structures.
ACCESSION #
34449635

 

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