TITLE

Cathodoluminescence spectroscopy of ambipolar diffusion in (Al,Ga)As barriers and capture of nonequilibrium carriers in GaAs quantum wells

AUTHOR(S)
Fujiwara, K.; Jahn, U.; Grahn, H. T.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p103504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ambipolar vertical diffusion of carriers generated in an Al0.3Ga0.7As barrier is investigated by cathodoluminescence (CL) spectroscopy in a system containing a sequence of GaAs-based quantum wells (QWs). The intensity distribution of the CL line scan exhibits a single exponential decay for the first QW of the sequence, reflecting a pure diffusion-limited transport. However, the CL line scans of the second, third, and fourth QWs are governed by diffusion only for large separations between the electron beam and the corresponding QW. For smaller distances, the CL intensity distribution is significantly influenced by the carrier capture into the intervening QWs.
ACCESSION #
34449616

 

Related Articles

  • Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire. Florescu, D. I.; Ting, S. M.; Ramer, J. C.; Lee, D. S.; Merai, V. N; Parkeh, A.; Lu, D.; Armour, E. A.; Chernyak, L. // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p33 

    We have examined the nature of V-defects and inclusions embedded within these defects by atomic force microscopy (AFM) and high-resolution scanning electron microscopy (SEM)/cathodoluminescence (CL) in InGaN/GaN multiple quantum wells (MQWs). To date, indium distribution nonuniformity in the...

  • Theoretical and Experiment Study of Cathodoluminescence of GaN. Ben Nasr, F.; Matoussi, A.; Salh, R.; Boufaden, T.; Guermazi, S.; Fitting, H.-J.; Eljani, B.; Fakhfakh, Z. // AIP Conference Proceedings;9/19/2007, Vol. 935 Issue 1, p65 

    In this work, we report the theoretical and experimental results of cathodoluminescence (CL) from GaN layers with thickness (1–3) micron grown at 800 °C by MOVPE on silicon substrate. The CL measurements were performed in a digital scanning electron microscope DSM 960 at room...

  • In situ patterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum-well.... Kawanishi, H.; Sugimoto, Y. // Applied Physics Letters;1/20/1992, Vol. 60 Issue 3, p365 

    Analyzes the fabrication of buried gallium arsenide/aluminum gallium arsenide single quantum-well structures by electron beam (EB) lithography. Formation of isolated quantum wells by chloride molecule gas etching; Performance of EB stimulated oxidation; Demonstration of the high quality...

  • Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy. Li, Shunfeng; Wang, Xue; Fündling, Sönke; Erenburg, Milena; Ledig, Johannes; Wei, Jiandong; Wehmann, Hergo H.; Waag, Andreas; Bergbauer, Werner; Mandl, Martin; Strassburg, Martin; Trampert, Achim; Jahn, Uwe; Riechert, Henning; Jönen, Holger; Hangleiter, Andreas // Applied Physics Letters;7/16/2012, Vol. 101 Issue 3, p032103 

    Homogeneous nitrogen-polar GaN core-shell light emitting diode (LED) arrays were fabricated by selective area growth on patterned substrates. Transmission electron microscopy measurements prove the core-shell structure of the rod LEDs. Depending on the growth facets, the InGaN/GaN multi-quantum...

  • On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN. Medvedev, O.; Vyvenko, O.; Bondarenko, A. // Semiconductors;Sep2015, Vol. 49 Issue 9, p1181 

    Using scanning electron microscopy in the cathodoluminescence mode, it is shown that straight segments of a-screw dislocations introduced by plastic deformation at room temperature into unintentionally doped low-resistance gallium nitride luminesce in the spectral range 3.1-3.2 eV at 70 K. The...

  • Cathodoluminescence and transmission electron microscopy study of dark line defects in thick In0.2Ga0.8As/GaAs multiple quantum wells. Rich, D. H.; George, T.; Pike, W. T.; Maserjian, J.; Grunthaner, F. J.; Larsson, A. // Journal of Applied Physics;12/15/1992, Vol. 72 Issue 12, p5834 

    Presents a study which investigated the spatial distribution of the long-wavelength luminescence in thick multiple quantum wells using cathodoluminescence imaging and spectroscopy. Indication of the large spatial variation of the luminescence intensities; Applications of the molecular beam...

  • Cathodoluminescence system for a scanning electron microscope using an optical fiber for light collection. Hoenk, Michael E.; Vahala, Kerry J. // Review of Scientific Instruments;Feb1989, Vol. 60 Issue 2, p226 

    We describe a novel light collection system for cathodoluminescence scanning electron microscopy. Cathodoluminescence emitted from the sample surface enters directly into the facet of an optical fiber, which is held less than a millimeter away from the sample to optimize the collection...

  • Nanocrystalline LaGaO3:Tm3+ as an efficient blue phosphor for field emission displays with high color purity. Liu, Xiaoming; Lin, Jun // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p184108 

    Nanocrystalline Tm3+-doped LaGaO3 phosphors were prepared through a Pechini-type sol-gel process [M. P. Pechini, U.S. Patent No. 3,330,697 (11 July 1967)]. X-ray diffraction, field emission scanning electron microscopy, photoluminescence, and cathodoluminescence (CL) spectra were utilized to...

  • Studies of Stokes shift in InxGa1-xN alloys. Huang, Y. H.; Cheng, C. L.; Chen, T. T.; Chen, Y. F.; Tsen, K. T. // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p103521 

    InGaN ternary alloys have been studied with photoluminescence, photoluminescence excitation spectroscopy, scanning electron microscopy, and cathodoluminescence spectroscopy. The relatively large Stokes shift observed in the photoluminescence and photoluminescence excitation spectroscopy has been...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics