TITLE

Charge transport in accumulation layers of organic heterojunctions

AUTHOR(S)
Feng Zhu; Haibo Wang; De Song; Kun Lou; Donghang Yan
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p103308
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We studied the charge transport in organic heterojunction films consisting of copper phthalocyanine (CuPc) and copper hexadecafluorophthalocyanine (F16CuPc). The heterojunction effect between CuPc and F16CuPc induced high-density carriers at both sides of heterojunction. The Hall effect was observed at room temperature, which demonstrated the existence of free carriers and their delocalized transport under heterojunction effect. The Hall mobility of 1.2 cm2/V s for holes and 2.4 cm2/V s for electrons indicated that the transport capability of the heterojunction films is comparable to single crystals. The transport process was further explained by the multiple trap-and-release model according to the temperature dependence of conduction.
ACCESSION #
34449598

 

Related Articles

  • Enhancement of electron mobility in nanocrystalline silicon/crystalline silicon heterostructures. Chen, X. Y.; Shen, W. Z.; He, Y. L. // Journal of Applied Physics;1/15/2005, Vol. 97 Issue 2, p024305 

    We report on an effective way to obtain high electron mobility (∼103 cm2/V s) in lowly doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films by constructing nc-Si:H/crystalline Si (c-Si) heterostructures. The enhancement has been demonstrated in a comparative study on nc-Si:H thin...

  • Optical analysis of doped ZnO thin films using nonparabolic conduction-band parameters. Kim, J. S.; Jeong, J.-h.; Park, J. K.; Baik, Y. J.; Kim, I. H.; Seong, T.-Y.; Kim, W. M. // Journal of Applied Physics;Jun2012, Vol. 111 Issue 12, p123507 

    The optical properties of impurity doped ZnO thin films were analyzed by taking into account the nonparabolicity in the conduction-band and the optically determined carrier concentration and mobility were correlated with those measured by Hall measurement. The Drude parameters obtained by...

  • Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures. Guduru, V. K.; Granados del Aguila, A.; Wenderich, S.; Kruize, M. K.; McCollam, A.; Christianen, P. C. M.; Zeitler, U.; Brinkman, A.; Rijnders, G.; Hilgenkamp, H.; Maan, J. C. // Applied Physics Letters;2/4/2013, Vol. 102 Issue 5, p051604 

    The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel,...

  • Magnetic coupling in amorphous Co-Er films. Benjelloun, J.; Lassri, H. // Journal of Applied Physics;2/1/1999, Vol. 85 Issue 3, p1675 

    Studies the rf sputtering and magnetic properties of amorphous copper alloy thin films. Experimental details; Results and discussion; Conclusions.

  • Unicrystal Co-alloy media on Si(110). Yang, Wei; Lambeth, David N. // Journal of Applied Physics;4/15/1999 Part 2A of 2, Vol. 85 Issue 8, p4723 

    Describes how the unicrystal copper-alloy thin-film media was fabricated on chromium (112)/silver (110)/HF-silicon(110) by sputter deposition. Details on thin-film fabrication and characterization.

  • Thickness dependence of giant magnetoresistance effect in granular Cu-Co thin films. Malkinski, L. M.; Wang, J.-Q. // Journal of Applied Physics;4/15/1999 Part 2A of 2, Vol. 85 Issue 8, p4471 

    Provides information on a study which investigated the magnetic and transport properties of Cu-Co thin films with a special reference to their dependence on the film thickness. Experimental details; Results and discussion.

  • Energy band discontinuities in heterojunctions measured by internal photoemission. Heiblum, M.; Nathan, M. I.; Eizenberg, M. // Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p503 

    A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1-xAs heterojunctions. We have found for x<0.4...

  • Two-band tunneling currents in metal-oxide-semiconductor capacitors at the transition from direct... Okhonin, S.; Fazan, P.; Guegan, G.; Deleonibus, S.; Martin, F. // Applied Physics Letters;2/8/1999, Vol. 74 Issue 6, p842 

    Studies the conduction and valence band tunneling currents in ultrathin silicon dioxide films. Slopes of the current-voltage characteristics; Conduction band current oscillations due to interference of the electrons from the inversion channel at the oxide/gate interface; Shape of the slope of...

  • Giant Hall effect in Fe[sub x]Sn[sub 100-x] granular alloy films. Gao, Jun; Wang, Fei; Jiang, Xiaolong; Ni, Gang; Zhang, Fengming; Du, Youwei // Journal of Applied Physics;2/1/2003, Vol. 93 Issue 3, p1851 

    The Hall resistivity of Fe[sub x]Sn[sub 100-x] granular alloy films fabricated by ion-beam sputtering has been studied. A saturated Hall resistivity up to 8.68 μΩ cm, the highest value ever observed for ferromagnetic metal/nonmagnetic metal system, has been obtained for the sample with Fe...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics