Single-photon-emitting diode at liquid nitrogen temperature

Dou, X. M.; Chang, X. Y.; Sun, B. Q.; Xiong, Y. H.; Niu, Z. C.; Huang, S. S.; Ni, H. Q.; Du, Y.; Xia, J. B.
September 2008
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p101107
Academic Journal
We report on the study of a single-photon-emitting diode at 77 K. The device is composed of InAs/GaAs quantum dots embedded in the i-region of a p-i-n diode structure. The high signal to noise ratio of the electroluminescence, as well as the small second order correlation function at zero-delay g(2)(0), implies that the device has a low multiphoton emission probability. By comparing the device performances under different excitation conditions, we have, in detail, discussed the basic parameters, such as signal to noise ratio and g(2)(0), and provided some useful information for the future application.


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