Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates

Atkinson, P.; Kiravittaya, S.; Benyoucef, M.; Rastelli, A.; Schmidt, O. G.
September 2008
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p101908
Academic Journal
Site-controlled growth of single and pairs of InAs quantum dots is demonstrated on ex situ electron-beam patterned (001) GaAs substrates using in situ Ga-assisted deoxidation prior to overgrowth. 6–8 ML of gallium deposited at a substrate temperature of 460 °C in the absence of arsenic followed by a brief anneal under arsenic is used to remove the surface oxide without damaging a pattern consisting of ∼100 nm wide, ∼20 nm deep holes. Single dot luminescence is shown from a dilute array (10 μm spacing) of such site-controlled dots, located only 8 nm from the regrowth interface.


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