Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Chamings, J.; Adams, A. R.; Sweeney, S. J.; Kunert, B.; Volz, K.; Stolz, W.
September 2008
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p101108
Academic Journal
We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/cm2 at 80 K (λ=890 nm). Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall threshold current is temperature sensitive. A sublinear variation of spontaneous emission versus current coupled with a decrease in external quantum efficiency with increasing temperature and an increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism.


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