Polar face dependence of the ultrafast UV reflectivity of ZnO single crystal

Schneck, J. R.; Bellotti, E.; Lamarre, P.; Ziegler, L. D.
September 2008
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p102111
Academic Journal
The transient reflectivity of an ∼40 fs, 340 nm pulse incident on each face of a ZnO single crystal is reported as a function of carrier density. Three exponentially damped carrier relaxation components can be identified in these responses. Only the Zn face reflectivity reveals a subpicosecond decay (200–300 fs) due to electron scattering. In contrast, the O face reflectivity exhibits an ∼2 ps absorptive decay attributed to the trapping of carriers by O-surface defects at the earliest times. The other decay components are consistent with electron cooling via acoustic phonons and exciton recombination for both faces.


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