Evidence for ion irradiation induced dissociation and reconstruction of Si–H bonds in hydrogen-implanted silicon

Di, Z. F.; Wang, Y. Q.; Nastasi, M.; Shao, L.; Lee, J. K.; Theodore, N. D.
September 2008
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p104103
Academic Journal
We observe that H-related chemical bonds formed in H-implanted Si will evolve under subsequent ion irradiation. During ion irradiation hydrogen is inclined to dissociate from simple H-related defect complexes (i.e., VHx and IHx), diffuse, and attach to vacancy-type defects resulting in new platelet formation, which facilitate surface blistering after annealing, a process completely inhibited in the absence of ion irradiation. The understanding of our results provides insight into the structure and stability of hydrogen-related defects in silicon.


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