TITLE

Evidence for ion irradiation induced dissociation and reconstruction of Si–H bonds in hydrogen-implanted silicon

AUTHOR(S)
Di, Z. F.; Wang, Y. Q.; Nastasi, M.; Shao, L.; Lee, J. K.; Theodore, N. D.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p104103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We observe that H-related chemical bonds formed in H-implanted Si will evolve under subsequent ion irradiation. During ion irradiation hydrogen is inclined to dissociate from simple H-related defect complexes (i.e., VHx and IHx), diffuse, and attach to vacancy-type defects resulting in new platelet formation, which facilitate surface blistering after annealing, a process completely inhibited in the absence of ion irradiation. The understanding of our results provides insight into the structure and stability of hydrogen-related defects in silicon.
ACCESSION #
34449550

 

Related Articles

  • Hydrogen shuttling near Hf-defect complexes in Si/SiO2/HfO2 structures. Marinopoulos, A. G.; Batyrev, I.; Zhou, X. J.; Schrimpf, R. D.; Fleetwood, D. M.; Pantelides, S. T. // Applied Physics Letters;12/3/2007, Vol. 91 Issue 23, p233503 

    We propose that a defect complex comprising a suboxide Hf–Si bond and an interfacial dangling bond is responsible for the stress-induced buildup of interface traps in Si/SiO2/HfO2 capacitors. With the aid of first-principles calculations, we show that these defects possess a symmetric...

  • Solid phase epitaxy in uniaxially stressed (001) Si. Rudawski, N. G.; Jones, K. S.; Gwilliam, R. // Applied Physics Letters;10/22/2007, Vol. 91 Issue 17, p172103 

    The effect of [110] uniaxial stresses up to 1.5 GPa on defect nucleation during solid phase epitaxy of amorphous (001) Si created via ion implantation was examined. The solid phase epitaxial regrowth velocity was slowed in compression. However, in tension, the velocity was unaffected. Both...

  • Dissociation of H-related defect complex in InP using high energy light ions. Kabiraj, D.; Roy, A.; Pivin, J. C.; Ghosh, Subhasis // Journal of Applied Physics;Aug2008, Vol. 104 Issue 3, p033711 

    High energy light ion irradiation has been used to anneal H-related defect complexes and to modify the electronic properties of semi-insulating InP (SI-InP). Raman and infrared spectroscopic measurements have been used to investigate the annihilation of native defects in SI-InP irradiated with...

  • Dissociation kinetics of hydrogen-passivated (100) Si/SiO2 interface defects. Stathis, J. H. // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6205 

    Presents a study which measured the activation energy for thermal dissociation of hydrogen from silicon dangling-bond defects. Experimental details; Results and discussion; Conclusion.

  • Hydrogen dynamics in SiO[sub]2 triggered by electronic excitations. Yokozawa, Ayumi; Miyamoto, Yoshiyuki // Journal of Applied Physics;10/15/2000, Vol. 88 Issue 8, p4542 

    Focuses on the possibility of hydrogen dissociation from H-terminated oxygen vacancies in SiO[sub 2] induced by Si-H excitation. Treatment of real-time electron dynamics by solving the time-dependent Schrodinger equation coupled with Newton's equations for ions; Factors responsible for the Si-H...

  • Dynamical quenching of field-induced dissociation of H[sub 2][sup +] in intense infrared lasers. Chateauneuf, F.; Nguyen-Dang, T.-T. // Journal of Chemical Physics;3/8/1998, Vol. 108 Issue 10, p3974 

    Examines the dissociation dynamics of the hydrogen molecular ion (H[sub 2][sup +] in infrared (IR) lasers. Presence of behavior differences of H[sub 2][sup +] under IR laser field; Involvement of Floquet analysis in dynamical dissociation quenching effect; Importance of instantaneous...

  • Adatom bond dissociation and H–O2 bond formation in the reaction between an adsorbed hydrogen atom and an oxygen molecule: A trajectory dynamics study. Shin, H. K. // Journal of Chemical Physics;2/15/1992, Vol. 96 Issue 4, p3330 

    The collisional dissociation of the H-surface bond and the formation of the H–O2 bond in the O2(gas)/H(ads) collision taking place on a tungsten surface have been studied by classical trajectory methods over the collision energy range of 0.1–2.0 eV. The effects of the interactions...

  • Hydrogen atom release from methyl groups of energized molecules. Zhiyuan Min; Teh-Hwa Wong; Bersohn, Richard // Journal of Chemical Physics;5/22/1999, Vol. 110 Issue 20, p9956 

    Focuses on the irradiation of 2,3,4,5,6-pentafluorotoluene (PFT), trimethylamine and methyl bromide by weak 193.3 nm light. Release of hydrogen atoms as the major channel for PFT and as minor channel for the other two; Implications of the low average translational energy release and the...

  • Photoion-pair formation and photoelectron-induced dissociative attachment in C2H2: D0(HCC–H). Ruscic, B.; Berkowitz, J. // Journal of Chemical Physics;10/15/1990, Vol. 93 Issue 8, p5586 

    The formation of C2H- is observed in two broad resonance bands when C2H2 is irradiated with vuv light. The higher-energy band has partially resolved structure, approximately linear pressure dependence, and a threshold at 16.335±0.021 eV. It is attributed to photoion-pair formation (C2H-+H+)...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics