In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructures

Felisari, L.; Grillo, V.; Martelli, F.; Trotta, R.; Polimeni, A.; Capizzi, M.; Jabeen, F.; Mariucci, L.
September 2008
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p102116
Academic Journal
GaAsN/GaAsN:H in-plane heterostructures have been investigated by secondary electron (SE) imaging in a field-emission scanning electron microscope. Adjacent GaAsN and GaAsN:H regions show a quite different SE image brightness due to the band gap energy difference between H-free and H-irradiated GaAsN. These findings provide a useful means to characterize the lateral diffusion of H and well support secondary ion mass spectroscopy results regarding the importance of a low hydrogenation temperature in order to obtain sharply defined in-plane heterostructures.


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