TITLE

In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructures

AUTHOR(S)
Felisari, L.; Grillo, V.; Martelli, F.; Trotta, R.; Polimeni, A.; Capizzi, M.; Jabeen, F.; Mariucci, L.
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p102116
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAsN/GaAsN:H in-plane heterostructures have been investigated by secondary electron (SE) imaging in a field-emission scanning electron microscope. Adjacent GaAsN and GaAsN:H regions show a quite different SE image brightness due to the band gap energy difference between H-free and H-irradiated GaAsN. These findings provide a useful means to characterize the lateral diffusion of H and well support secondary ion mass spectroscopy results regarding the importance of a low hydrogenation temperature in order to obtain sharply defined in-plane heterostructures.
ACCESSION #
34449539

 

Related Articles

  • Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP. Haegel, N. M.; Mills, T. J.; Talmadge, M.; Scandrett, C.; Frenzen, C. L.; Yoon, H.; Fetzer, C. M.; King, R. R. // Journal of Applied Physics;Jan2009, Vol. 105 Issue 2, p1 

    An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical...

  • Hydrogen diffusion along passivated grain boundaries in silicon ribbon. Dubé, C.; Hanoka, J. I.; Sandstrom, D. B. // Applied Physics Letters;1984, Vol. 44 Issue 4, p425 

    Using the electron beam induced current mode of the scanning electron microscope, a technique has been developed to study the extent of hydrogen passivation and diffusion along grain boundaries in silicon ribbon grown by the edge-defined film-fed growth process. Passivation and diffusion depths...

  • Effect of alpha-Hgl[sub 2] epitaxial growth on the defect structure of CdTe:Ge substrates. Panin, G.; Piqueras, J. // Applied Physics Letters;2/17/1997, Vol. 70 Issue 7, p877 

    Examines the mercury/cadmium-tellurium:germanium (alpha-HgI[sub 2]/CdTe:Ge) heterostructures by cathodoluminescence (CL) in the scanning electron microscope. Provisions of the CL technique; Appearance of the band-edge emission and relative changes in the concentration of point defects related...

  • Disappearance of Acropora from the Marquesas (French Polynesia) during the last deglacial period. Cabioch, G.; Wallace, C.; McCulloch, M.; Zibrowius, H.; Laboute, P.; Forges, B. // Coral Reefs;Dec2011, Vol. 30 Issue 4, p1101 

    The major reef-building coral genus Acropora has never been recorded, living or fossil, from the Marquesas Islands in the central Pacific Ocean, which are characterized by limited modern reef formations. During the 'Musorstom 9' cruise in 1997, investigations of marine platforms representing...

  • Investigation of the flickering of La2O3 and ThO2 doped tungsten cathodes. Hoebing, T.; Hermanns, P.; Bergner, A.; Ruhrmann, C.; Traxler, H.; Wesemann, I.; Knabl, W.; Mentel, J.; Awakowicz, P. // Journal of Applied Physics;2015, Vol. 118 Issue 2, p023306-1 

    Short-arc lamps are equipped with tungsten electrodes due to their ability to withstand a high thermal load during operation. Nominal currents of more than one hundred amperes lead to a cathode tip temperature near the melting point of tungsten. To reduce the electrode temperature and, thereby,...

  • Effect of temperature on the electrodeposition of disperse copper deposits. Nikolić, Nebojša D.; Pavlović, Ljubica J.; Pavlović, Miomir G.; Konstantin I. Popov // Journal of the Serbian Chemical Society;Dec2007, Vol. 72 Issue 12, p1369 

    The effect of temperature on the electrodeposition of copper at overpotentials belonging to the plateau of the limiting diffusion current density and higher was examined by the determination of the average current efficiency of hydrogen evolution and by scanning electron microscopic (SEM)...

  • Comparison of Diameters of Disk Microelectrodes Obtained from Microscopes with Those Evaluated from Steady-State Currents. Aoki, Koichi; Chun Ouyang; Chaofu Zhang; Jingyuan Chen; Nishiumi, Toyohiko // International Journal of Electrochemical Science;Jul2012, Vol. 7 Issue 7, p5880 

    Diameters of disk microelectrodes evaluated from steady-state diffusion-controlled currents by use of Saito's equation were smaller than geometrical diameters obtained from a scanning electron microscope (SEM) when the diameters were less than 4 µm. The smallest electrode that could be...

  • Misfit-Dislocation Induced Surface Morphology of InGaAs/GaAs Heterostructures. Yastrubchak, Oksana; Wosiński, Tadeusz; Łusakowska, Elżbieta; Figielski, Tadeusz; Tóth, Attila L. // Microchimica Acta;Apr2004, Vol. 145 Issue 1-4, p267 

    The correlation between the surface cross-hatched morphology and the interfacial misfit dislocations in partially relaxed InGaAs/GaAs heterostructures was studied by means of atomic force microscopy and electron-beam induced current mode in a scanning electron microscope. A close correspondence...

  • Hole diffusion length investigation by photon and electron excitation of GaAs Schottky barriers. Tarricone, Luciano; Frigeri, Cesare; Gombia, Enos; Zanotti, Lucio // Journal of Applied Physics;9/1/1986, Vol. 60 Issue 5, p1745 

    Examines a hole diffusion length in liquid-encapsulated-Czochralski GaAs monocrystals, using photon and electron bombardment through semitransparent gold and chromium Schottky electrodes. Relationship of the diffusion length investigation carried out by the steady-state surface photovoltage and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics