TITLE

Two dimensionally patterned GaNxAs1-x/GaAs nanostructures using N+ implantation followed by pulsed laser melting

AUTHOR(S)
Kim, Taeseok; Aziz, Michael J.; Narayanamurti, Venkatesh
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p102117
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present measurements on two dimensionally patterned GaNxAs1-x dots fabricated in a GaAs matrix using ion implantation followed by pulsed laser melting and rapid thermal annealing. The lithographically patterned GaNxAs1-x regions are imaged by ballistic electron emission microscopy (BEEM). By analyzing the BEEM spectra of the locally confined dots, we observe the decrease in the Schottky barrier height with nitrogen incorporation. The second derivatives of BEEM currents from unpatterned GaNxAs1-x films exhibit a decrease in Γ-like thresholds as the nitrogen concentration increases. The composition dependence of the thresholds agrees well with that of previously studied low temperature molecular beam epitaxy grown alloys.
ACCESSION #
34449538

 

Related Articles

  • P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process. Myers, M. A.; Myers, M. T.; General, M. J.; Lee, J. H.; Shao, L.; Wang, H. // Applied Physics Letters;9/10/2012, Vol. 101 Issue 11, p112101 

    ZnO thin films were grown on sapphire (0001) substrates by pulsed-laser deposition at 700 °C. 70 keV N+ ion implantation was performed under various temperatures and fluences in the range of 300-460 °C and 3.0×1014-1.2×1015 cm-2, respectively. Hall measurements indicate that the...

  • Rapid thermal and pulsed laser annealing of boron fluoride-implanted silicon. Narayan, J.; Holland, O. W.; Christie, W. H.; Wortman, J. J. // Journal of Applied Physics;4/15/1985, Vol. 57 Issue 8, p2709 

    Investigates the characteristics of rapid thermal and pulsed laser annealing in boron fluoride-implanted silicon using cross-section and plan-view electron microscopy. Electrical properties of the boron fluoride-implanted silicon; Concentration profiles of boron before and after rapid thermal...

  • Formation of self-assembled epitaxial nickel nanostructures. Zhou, H.; Kumar, D.; Kvit, A.; Tiwari, A.; Narayan, J. // Journal of Applied Physics;10/15/2003, Vol. 94 Issue 8, p4841 

    Highly orientated nickel magnetic nanoparticles were obtained by pulsed laser deposition technique on silicon (100) substrate using epitaxial titanium nitride film as the template. These nanoparticles have been characterized by conventional and high-resolution transmission electron microscopy,...

  • Growth of ZnO nanocrystals by pulsed laser deposition on sapphire and silicon and the infrared spectra of the nanocrystals. Bazhenov, A. V.; Fursova, T. N.; Maksimuk, M. Yu.; Kaidashev, E. M.; Kaidashev, V. E.; Misochko, O. V. // Semiconductors;Nov2009, Vol. 43 Issue 11, p1532 

    The ZnO nanorods that comprise highly oriented nanorod structures are grown on sapphire and silicon substrates by laser ablation. The nanostructures grown in different conditions are characterized by means of electron microscopy and Fourier infrared reflectance spectroscopy. The contributions of...

  • Magnetic-electric properties of epitaxial multiferroic NiFe2O4–BaTiO3 heterostructure. Deng, Chaoyong; Zhang, Yi; Ma, Jing; Lin, Yuanhua; Nan, Ce-Wen // Journal of Applied Physics;Oct2007, Vol. 102 Issue 7, p074114 

    A simple epitaxial heterostructure of NiFe2O4–BaTiO3 grown on (001)-SrTiO3 substrate was prepared via pulsed laser deposition. Structural characterization by x-ray diffraction and electron microscopy showed good horizontal heterostructure of (001)-NiFe2O4∥(001)-BaTiO3 epitaxially...

  • Nanostructure fabrication by reactive-ion etching of laser-focused chromium on silicon. McClelland, J.J.; Gupta, R.; Celotta, R.J.; Porkolab, G.A. // Applied Physics B: Lasers & Optics;1998, Vol. 66 Issue 1, p95 

    Abstract. We have fabricated chromium nanostructures on silicon by laser-focused atomic deposition and have further processed these structures by reactive-ion etching in an SF[sub 6] plasma. We show that the result can be an array of parallel wires as narrow as 68 nm or an array of parallel Si...

  • Precipitate-hardened aluminum alloys formed using pulsed laser deposition. Knapp, J. A.; Follstaedt, D. M.; Myers, S. M. // Journal of Applied Physics;1/15/1996, Vol. 79 Issue 2, p1116 

    Presents a study on the formation of very high-strength alloys of aluminum (Al) by pulsed laser deposition from Al and Al[sub2]O[sub3] targets. Schematic of the pulsed laser deposition system; Details on film deposition and characterization; Measurement of the mechanical properties of the films...

  • Structure and giant magnetoresistance of granular Co–Cu nanolayers prepared by cross-beam pulsed laser deposition. Jesche, A.; Gorbunoff, A.; Mensch, A.; Stöcker, H.; Levin, A. A.; Meyer, D. C. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 2, p023904 

    A series of CoxCu100-x (x=0, 40–75, 100) layers with thicknesses between 13 and 55 nm were prepared on silicon substrates using cross-beam pulsed laser deposition. Wide-angle x-ray diffraction (WAXRD), transmission electron microscopy (TEM), and electrical transport measurements revealed...

  • Patterned selective growth of carbon nanotubes and large field emission from vertically well-aligned carbon nanotube field emitter arrays. Sohn, Jung Inn; Lee, Seonghoon; Song, Yoon-Ho; Choi, Sung-Yool; Cho, Kyoung-Ik; Nam, Kee-Soo // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p901 

    We have grown well-aligned carbon nanotube arrays by thermal chemical vapor deposition at 800 °C on Fe nanoparticles deposited by a pulsed laser on a porous Si substrate. We also attain a selective growth of carbon nanotubes on a patterned Fe film on Si substrates in terms of pulsed laser...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics