The effect of the last quantum barrier on the internal quantum efficiency of InGaN-light emitting diode

Park, Eun-Hyun; Jang, Jin; Gupta, Shalini; Ferguson, Ian; Jeon, Soo-Kun; Lim, Jae-Gu; Lee, Jun-Serk; Kim, Cheol-Hoi; Park, Joong-Seo
September 2008
Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p101112
Academic Journal
The effect of the last quantum barrier (LQB) on the internal quantum efficiency of GaN-light emitting diode (LED) was systematically investigated using a dual-wavelength GaN-LED design. Compared with a conventional GaN-LQB, a high indium contained In0.03Ga0.97N-LQB efficiently reduced the unintentional Mg impurity in the last quantum well and improved its photoluminescence and electroluminescence intensity up to 72% and 15%, respectively.


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