Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes

Carrington, P. J.; Solov'ev, V. A.; Zhuang, Q.; Krier, A.; Ivanov, S. V.
September 2008
Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p091101
Academic Journal
Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb2 and As2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 μm was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region.


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