Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks

Liao, J. C.; Fang, Y. K.; Hou, Y. T.; Hung, C. L.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.
September 2008
Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p092101
Academic Journal
The strain effect and channel length dependence of bias temperature instability on dual metal gate complementary metal-oxide-semiconductor field enhanced transistors with HfSiON dielectric were studied in detail. For channel length larger than 0.1 μm, both positive and negative bias temperature instabilities (PBTI and NBTI) were not affected by the tensile strain obviously. As the channel scaling down to less than 0.1 μm, the degradation after PBTI stress was still not influenced by the strain, however, the NBTI degradation was enhanced significantly. In addition, the dependence of BTI on channel length was extensively investigated under constant voltage and field stress.


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