TITLE

Trap distribution and the impact of oxygen-induced traps on the charge transport in poly(3-hexylthiophene)

AUTHOR(S)
Schafferhans, Julia; Baumann, Andreas; Deibel, Carsten; Dyakonov, Vladimir
PUB. DATE
September 2008
SOURCE
Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p093303
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The trap distribution in the conjugated polymer poly(3-hexylthiophene) was investigated by fractional thermally stimulated current measurements. Two defect states with activation energies of about 50 and 105 meV and Gaussian energy distributions were revealed. The first is assigned to the tail of the intrinsic density of states, whereas the concentration of the second trap is directly related to oxygen exposure. The impact of the oxygen induced traps on the charge transport was examined by performing photo-induced charge carrier extraction by linearly increasing voltage measurements that exhibited a strong decrease in the mobility with air exposure time.
ACCESSION #
34360698

 

Related Articles

  • Inherent charge transfer layer formation at La0.6Sr0.4FeO3/La0.6Sr0.4MnO3 heterointerface. Kumigashira, H.; Kobayashi, D.; Hashimoto, R.; Chikamatsu, A.; Oshima, M.; Nakagawa, N.; Ohnishi, T.; Lippmaa, M.; Wadati, H.; Fujimori, A.; Ono, K.; Kawasaki, M.; Koinuma, H. // Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5353 

    We have investigated the Mn 3d spectral function in La0.6Sr0.4FeO3(LSFO)/ La0.6Sr0.4MnO3(LSMO) heterointerfaces as well as of La1-xSrxMnO3 films using Mn 2p-3d resonant photoemission spectroscopy. The strong enhancement of the Mn 3d spectra at the Mn 2p-3d threshold enables us to extract the Mn...

  • Measurements orf charge accumulation induced by monochromatic low-energy electrons at the surface... Bass, A.D.; Cloutier, P.; Sanche, L. // Journal of Applied Physics;9/1/1998, Vol. 84 Issue 5, p2740 

    Focuses on measuring the charge accumulated in insulators. Description of the appartus used to measure the accumulation; Provision of energy and current by a high-resolution electron monochromator; Measurement of the surface charge.

  • A current-pulse generator with an intermediate storage for inductive-resistive load operation. Abdullin, E.; Kiselev, V.; Morozov, A.; Zhao, Yongpeng // Instruments & Experimental Techniques;Jul2011, Vol. 54 Issue 4, p504 

    The design and results of tests of a generator developed for obtaining a current of positive polarity with a duration of the first half-period of 110-130 ns, an amplitude of 40-70 kA in the single-pulse mode, and an amplitude of 30 kA at a pulse repetition rate of 10 Hz for 5 min in an...

  • Endurance improvement of resistance switching behaviors in the La0.7Ca0.3MnO3 film based devices with Ag–Al alloy top electrodes. Yang, R.; Li, X. M.; Yu, W. D.; Gao, X. D.; Shang, D. S.; Chen, L. D. // Journal of Applied Physics;Mar2010, Vol. 107 Issue 6, p063703 

    The resistance switching characteristics of the La0.7Ca0.3MnO3-based devices with the top electrodes of Ag, Ag–Al alloys with the atomic ratios of Ag:Al=2:1 (2AgAl) and Ag:Al=1:2 (Ag2Al), and Al have been investigated. The device with 2AgAl top electrode shows excellent endurance, where...

  • Electroresistance of La0.8Li0.2MnO3. Lewis, R. A. // Applied Physics Letters;5/5/2008, Vol. 92 Issue 18, p184102 

    The electroresistance of La0.8Li0.2MnO3 has been measured at many applied currents and temperatures. As the magnitude of the current decreases, the electroresistance becomes more pronounced. Substantial electroresistance is observed over a wide range of temperatures. The greatest effect occurs...

  • Field-Effect Transistors.  // Network Dictionary;2007, p195 

    A reference entry for "field-effect transistors (FET)" is presented. It is also known as unipolar transistors. A narrow conducting channel with an insulating depleting zone at the side is where the main current appears in FET. Particular focus is given to an approach to altering the width of...

  • Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method. Matys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T. // Applied Physics Letters;7/8/2013, Vol. 103 Issue 2, p021603 

    We determined the energy distribution of donor-like interface state density DitD(E) at the Al2O3/AlGaN interface in a metal/Al2O3/AlGaN/GaN heterostructure (MISH) capacitor. In this order, we developed a point-by-point graphical method based on the measurement and simulations of the MISH...

  • Electrical-transport measurements on fragile single crystals to 7.5 GPa in the diamond anvil cell. Tozer, S. W.; King, H. E. // Review of Scientific Instruments;Feb1985, Vol. 56 Issue 2, p260 

    A four-probe method is presented for the study of electrical-transport properties of materials ranging from insulators to metals. Development of several experimental procedures and apparatuses and the fabrication of a composite gasket has permitted quasihydrostatic electrical resistivity...

  • Resistivity analysis on n-semi-insulating-n and p-semi-insulating-p structures exemplified with semi-insulating InP. So¨derstro¨m, D.; Lourdudoss, S. // Journal of Applied Physics;4/1/2001, Vol. 89 Issue 7 

    Current-voltage characteristic in semi-insulating (SI) InP layers sandwiched between n- or p-type layers have been simulated. Deep acceptor and deep donor levels were considered. A one-dimensional two-carrier numerical model was used, which takes into account carrier diffusion and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics